ELECTRONIC CIRCUIT

• US 20150311779A1
• Filed: 10/30/2013
• Published: 10/29/2015
• Est. Priority Date: 10/31/2012
• Status: Active Grant

• Current Assignee: ROHM Co., Ltd.
• Original Assignee: ROHM Co., Ltd.
• Inventors: HAYASHIGUCHI, Masashi, MIURA, Mineo, INO, Kazuhide
• Granted Patent: US 9,461,533 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H02M 1/088 for the simultaneous control of series or parallel connected semiconductor devices
• CPC Class Codes: H02M 1/32 Means for protecting converters other than automatic disconnection
• CPC Class Codes: H02M 7/217 using semiconductor devices only
• CPC Class Codes: H03K 17/04123 in field-effect transistor switches
• CPC Class Codes: H03K 17/08122 in field-effect transistor switches
• CPC Class Codes: H03K 17/0822 in field-effect transistor switches
• CPC Class Codes: H03K 17/122 in field-effect transistor switches
• CPC Class Codes: H03K 17/163 Soft switching
• CPC Class Codes: H03K 2217/0045 Full bridges, determining the direction of the current through the load
• CPC Class Codes: Y02B 70/10 Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

When an overcurrent is detected by an overcurrent detecting circuit (36), a first switch circuit (32) selects a second input terminal (b) and connects an output terminal (c) to the second input terminal (b), with the result that the output terminal (c) of the first switch circuit (32) is put into a high-impedance state. The second switch circuit (34) selects a second output terminal (f) and connects an input terminal (d) to the second output terminal (f), with the result that the input terminal (d) of the second switch circuit (34) is grounded. That is, the gate of a first MOSFET (21) is grounded via a current interrupting resistor (35). The resistance value of the current interrupting resistor (35) is set so that, at the time of a current interruption, a time interval from a time when the gate-source voltage or gate-emitter voltage of the switching device lowers to such a voltage that the temperature characteristics of the on-resistance of the switching device become negative to a time when the drain current or collector current of the switching device reaches 2% of the saturation current thereof is 500 [nsec] or less.

Claims

1. An electronic circuit comprising:

a switching device including a plurality of switching elements that are connected in parallel and chiefly made of SiC;

an overcurrent detecting circuit to detect that an overcurrent is flowing in the switching device; and

an overcurrent protecting circuit to interrupt a current flowing in the switching device when an overcurrent is detected by the overcurrent detecting circuit, wherein

the overcurrent protecting circuit is arranged such that, at the time of a current interruption, a time interval from a time when the gate-source voltage or gate-emitter voltage of the switching device lowers to such a voltage that the temperature characteristics of the on-resistance of the switching device become negative to a time when the drain current or collector current of the switching device reaches 2% of the saturation current thereof is 500 [nsec] or less.

2. The electronic circuit according to claim 1, wherein the overcurrent protecting circuit is arranged such that, at the time of a current interruption, a time interval from a time when a current interrupting operation is started to a point at which the gate-source voltage or gate-emitter voltage of the switching device lowers to such a voltage that the temperature characteristics of the on-resistance of the switching device become negative is 100 [nsec] or more, and a time interval from the point to a time when the drain current or collector current of the switching device reaches 2% of the saturation current thereof is 500 [nsec] or less.

3. The electronic circuit according to claim 1, wherein

the overcurrent protecting circuit includes

a current interrupting resistor, and

a circuit that grounds the gate terminal of the switching device via the current interrupting resistor when an overcurrent is detected by the overcurrent detecting circuit, and

the resistance value of the current interrupting resistor is set so that a time interval from a time when the gate-source voltage or gate-emitter voltage of the switching device lowers to such a voltage that the temperature characteristics of the on-resistance of the switching device become negative to a time when the drain current or collector current of the switching device reaches 2% of the saturation current thereof is 500 [nsec] or less.

4. The electronic circuit according to claim 1, wherein

the overcurrent protecting circuit includes

a current interrupting resistor, and

a circuit that grounds the gate terminal of the switching device via the current interrupting resistor when an overcurrent is detected by the overcurrent detecting circuit, and

the resistance value of the current interrupting resistor is set so that a time interval from a time when a current interrupting operation is started to a point at which the gate-source voltage or gate-emitter voltage of the switching device lowers to such a voltage that the temperature characteristics of the on-resistance of the switching device become negative is 100 [nsec] or more, and a time interval from the point to a time when the drain current or collector current of the switching device reaches 2% of the saturation current thereof is 500 [nsec] or less.

5. The electronic circuit according to claim 1, wherein

the overcurrent protecting circuit includes

a first current interrupting resistor,

a second current interrupting resistor whose resistance value is larger than the resistance value of the first current interrupting resistor, and

a circuit that grounds the gate terminal of the switching device via the second current interrupting resistor when an overcurrent is detected by the overcurrent detecting circuit, and grounds the gate terminal of the switching device via the first current interrupting resistor when the gate-source voltage or gate-emitter voltage of the switching device lowers to such a voltage that the temperature characteristics of the on-resistance of the switching device become negative, and

the resistance value of the first current interrupting resistor is set so that a time interval from a time when the gate-source voltage or gate-emitter voltage of the switching device lowers to such a voltage that the temperature characteristics of the on-resistance of the switching device become negative to a time when the drain current or collector current of the switching device reaches 2% of the saturation current thereof is 500 [nsec] or less.

6. The electronic circuit according to claim 2, wherein

the overcurrent protecting circuit includes

a first current interrupting resistor,

a second current interrupting resistor whose resistance value is larger than the resistance value of the first current interrupting resistor, and

a circuit that grounds the gate terminal of the switching device via the second current interrupting resistor when an overcurrent is detected by the overcurrent detecting circuit, and grounds the gate terminal of the switching device via the first current interrupting resistor when the gate-source voltage or gate-emitter voltage lowers to such a voltage that the temperature characteristics of the on-resistance of the switching device become negative, and

the resistance value of the second current interrupting resistor is set so that a time interval from a time when a current interrupting operation is started to a point at which the gate-source voltage or gate-emitter voltage of the switching device lowers to such a voltage that the temperature characteristics of the on-resistance of the switching device become negative is 100 [nsec] or more, and

the resistance value of the first current interrupting resistor is set so that a time interval from a point at which the gate-source voltage or gate-emitter voltage of the switching device lowers to such a voltage that the temperature characteristics of the on-resistance of the switching device become negative to a time when the drain current or collector current of the switching device reaches 2% of the saturation current thereof is 500 [nsec] or less.

7. The electronic circuit according to claim 1, wherein the switching elements are ones arbitrarily selected from among MOSFETs, bipolar transistors, JFETs, and IGBTs that are chiefly made of SiC.