WAFER-SCALE PIXELATED DETECTOR SYSTEM

• US 20150312501A1
• Filed: 04/27/2015
• Published: 10/29/2015
• Est. Priority Date: 04/29/2014
• Status: Active Grant

• Current Assignee: Fermi Research Alliance, LLC
• Original Assignee: Fermi Research Alliance, LLC
• Inventors: Fahim, Farah, Deptuch, Grzegorz, Zimmerman, Tom
• Granted Patent: US 9,794,499 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/14661 of the hybrid type
• CPC Class Codes: H04N 25/00 Circuitry of solid-state image sensors [SSIS]; Control thereof
• CPC Class Codes: H04N 25/50 Control of the SSIS exposure
• CPC Class Codes: H04N 25/51 Control of the gain
• CPC Class Codes: H04N 25/707 Pixels for event detection
• CPC Class Codes: H04N 25/79 Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors

Abstract

A large area, gapless, detection system comprises at least one sensor; an interposer operably connected to the at least one sensor; and at least one application specific integrated circuit operably connected to the sensor via the interposer wherein the detection system provides high dynamic range while maintaining small pixel area and low power dissipation. Thereby the invention provides methods and systems for a wafer-scale gapless and seamless detector systems with small pixels, which have both high dynamic range and low power dissipation.

Claims

1. A large area, gapless, detection system comprising:

at least one sensor;

an interposer operably connected to said at least one sensor; and

at least one application specific integrated circuit operably connected to said sensor via the interposer wherein said detection system provides high dynamic range while maintaining small pixel area and low power dissipation.

2. The system of claim 1 wherein said at least one sensor further comprises a pixilated sensing material configured to produce charge signals in response to incident electromagnetic radiation.

3. The system of claim 2 wherein said sensor further comprises at least one sensor pixel defined by a segmentation of said pixilated sensing material.

4. The system of claim 3 wherein said interposer further comprises at least one material sheet, a plurality of through holes formed for electrical connection, a plurality of routing traces on at least one layer of said material sheet, and at least one pad configured to bond components to said interposer.

5. The system of claim 4 wherein said interposer connects said at least one sensor pixel and said at least one application specific integrated circuit.

6. The system of claim 4 wherein said interposer is configured as a pitch adaptor between said at least one pixel and said at least one pixel within one application specific integrated circuit.

7. The system of claim 3 wherein said at least one application specific integrated circuit further comprises at least one ASIC pixel.

8. The system of claim 7 wherein said at least one ASIC pixel is operably connected with said at least one sensor pixel by said interposer.

9. The system of claim 1 further comprising an analog front-end per pixel wherein said analog front-end is configured for processing an input signal via current splitting with at least one multiple scaled ranges.

18. The method of claim 9 further comprising:

connecting an analog front-end to said application specific integrated circuit; and

processing an input signal via current splitting with at least one multiple scaled ranges associated with said analog front-end.

10. A method for gapless data detection comprising:

configuring at least one sensor to collect incident electromagnetic radiation;

operably connecting said at least one sensor through an interposer; and

connecting said sensor to at least one application specific integrated circuit wherein said application specific integrated circuit is operably connected to said sensor via said interposer wherein said detection method provides high dynamic range while maintaining small pixel area and low power dissipation.

11. The method of claim 10 further comprising:

configuring said at least one sensor to be a pixilated sensing material configured to produce charge signals in response to incident electromagnetic radiation.

12. The method of claim 11 further comprising:

defining said at least one sensor pixel by a segmentation of said pixilated sensing material.

13. The method of claim 12 further comprising:

configuring said interposer as at least one material sheet, a plurality of through holes formed for electrical connection, a plurality of routing traces on at least one layer formed on a surface of said material sheet, and at least one pad configured to bond components to said interposer.

14. The method of claim 13 further comprising

connecting said at least one sensor pixel and said at least one pixel in an application specific integrated circuit via said interposer.

15. The method of claim 14 further comprising:

configuring said interposer as a pitch adaptor between said at least one sensor pixel and said at least one pixel within one application specific integrated circuit.

16. The method of claim 11 wherein said at least one application specific integrated circuit further comprises at least one ASIC pixel.

17. The method of claim 16 further comprising:

operably connecting said at least one ASIC pixel with said at least one sensor pixel by said interposer.

19. A large area, gapless, detection apparatus comprising:

at least one sensor;

an interposer operably connected to said at least one sensor; and

at least one application specific integrated circuit operably connected to said sensor via the interposer wherein said detection system provides high dynamic range while maintaining small pixel area and low power dissipation.

20. The apparatus of claim 19 wherein said at least one sensor further comprises a pixilated sensing material configured to produce charge signals in response to incident electromagnetic radiation and wherein said sensor further comprises at least one sensor pixel defined by a segmentation of said pixilated sensing material;

and

wherein said interposer further comprises at least one material sheet, a plurality of through holes formed for electrical connection, a plurality of routing traces on at least one layer of said material sheet, and at least one pad configured to bond components to said interposer, and wherein said interposer connects said at least one sensor pixel and said at least one pixel in the application specific integrated circuit.