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THIN FILM TRANSISTOR PANEL HAVING AN ETCH STOPPER ON SEMICONDUCTOR

  • US 20150318312A1
  • Filed: 07/14/2015
  • Published: 11/05/2015
  • Est. Priority Date: 02/11/2010
  • Status: Active Grant
First Claim
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1. A panel comprising a thin film transistor, the panel comprising:

  • a substrate;

    a first electrode on the substrate;

    a first insulating layer on the first electrode;

    an oxide semiconductor pattern on the first insulating layer;

    an etch stopper on the oxide semiconductor pattern;

    a second electrode and a third electrode on the etch stopper and the oxide semiconductor pattern,wherein a pattern of the etch stopper is contained entirely within a perimeter of the oxide semiconductor pattern, and distances between corresponding sidewalls of the etch stopper and the oxide semiconductor pattern are substantially the same.

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