SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
1 Assignment
0 Petitions
Accused Products
Abstract
An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.
6 Citations
5 Claims
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1. (canceled)
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2. A display device including a pixel, the pixel comprising:
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a first transistor; a second transistor; a capacitor; and a light-emitting element, wherein one of a source and a drain of the second transistor is electrically connected to the light-emitting element, wherein the other of the source and the drain of the second transistor is electrically connected to a first wiring, wherein a first electrode of the capacitor is electrically connected to a gate electrode of the second transistor, wherein the capacitor does not overlap with the first wiring, wherein a gate electrode of the first transistor is electrically connected to a second wiring, wherein the first wiring comprises a first portion, wherein the second wiring comprises a second portion, and wherein the first portion is parallel to the second portion. - View Dependent Claims (3)
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4. A display device including a pixel, the pixel comprising:
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a first transistor; a second transistor; a capacitor; and a light-emitting element, wherein one of a source and a drain of the second transistor is electrically connected to the light-emitting element, wherein the other of the source and the drain of the second transistor is electrically connected to a first wiring, wherein a channel forming region of the second transistor and a second electrode of the capacitor is provided in the same semiconductor island, wherein the capacitor does not overlap with the first wiring, wherein a gate electrode of the first transistor is electrically connected to a second wiring, wherein the first wiring comprises a first portion, wherein the second wiring comprises a second portion, and wherein the first portion is parallel to the second portion. - View Dependent Claims (5)
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Specification