SEMICONDUCTOR DEVICE WITH VOLTAGE-SUSTAINING REGION CONSTRUCTED BY SEMICONDUCTOR AND INSULATOR CONTAINING CONDUCTIVE REGIONS
First Claim
1. A semiconductor device, comprising a first main surface and a second main surface opposite to said first main surface, wherein at least a cell is located between said first main surface and said second main surface, wherein said cell has a first device feature region contacted with said first main surface and a second device feature region contacted with said second main surface;
- wherein a voltage-sustaining region is located between said first device feature region and said second device feature region, wherein said voltage-sustaining region includes at least a semiconductor region and an insulator region having at least a conductive region inside, said insulator region having at least a conductive region is called as (I+C)-region;
wherein said semiconductor region and said (I+C)-region contact directly each other;
said semiconductor device comprising at least two electrodes, wherein one electrode is contacted directly with a portion or the total of said first main surface, another electrode is contacted directly with a portion or the total of said second main surface, and said two electrodes are located outside of the region between said first main surface and said second main surface.
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Accused Products
Abstract
A semiconductor device has at least a cell between two opposite main surfaces. Each cell has a first device feature region contacted with the first main surface and a second device feature region contacted with the second main surface. There is a voltage-sustaining region between the first device feature region and the second device feature region, which includes at least a semiconductor region and an insulator region containing conductive region(s). The semiconductor region and the insulator region contact directly with each other. The structure of such voltage-sustaining region can not only be used to implement high-voltage devices, but further be used as a junction edge technique of high-voltage devices.
6 Citations
16 Claims
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1. A semiconductor device, comprising a first main surface and a second main surface opposite to said first main surface, wherein at least a cell is located between said first main surface and said second main surface, wherein said cell has a first device feature region contacted with said first main surface and a second device feature region contacted with said second main surface;
- wherein a voltage-sustaining region is located between said first device feature region and said second device feature region, wherein said voltage-sustaining region includes at least a semiconductor region and an insulator region having at least a conductive region inside, said insulator region having at least a conductive region is called as (I+C)-region;
wherein said semiconductor region and said (I+C)-region contact directly each other;said semiconductor device comprising at least two electrodes, wherein one electrode is contacted directly with a portion or the total of said first main surface, another electrode is contacted directly with a portion or the total of said second main surface, and said two electrodes are located outside of the region between said first main surface and said second main surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
- wherein a voltage-sustaining region is located between said first device feature region and said second device feature region, wherein said voltage-sustaining region includes at least a semiconductor region and an insulator region having at least a conductive region inside, said insulator region having at least a conductive region is called as (I+C)-region;
Specification