LED CHIP RESISTANT TO ELECTROSTATIC DISCHARGE AND LED PACKAGE INCLUDING THE SAME

• US 20150318443A1
• Filed: 05/28/2015
• Published: 11/05/2015
• Est. Priority Date: 02/15/2013
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Suh, Duk Il, Kim, Kyoung Wan, Yoon, Yeo Jin, Woo, Sang Won, Kim, Shin Hyoung
• Granted Patent: US 9,929,315 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 29/861 Diodes
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

A light emitting diode chip and a light emitting diode package including the same. The light emitting diode chip includes a substrate, a light emitting diode section disposed on the substrate, an inverse parallel diode section disposed on the substrate and connected inversely parallel to the light emitting diode section. In the light emitting diode chip, the light emitting diode section is disposed together with the inverse parallel diode section.

Claims

1-24. -24. (canceled)

25. A light emitting diode chip comprising:

a substrate having a first and a second surface;

a light emitting diode disposed over the first surface of the substrate, the light emitting diode comprising;

a first conductivity type nitride semiconductor layer;

a second conductivity type nitride semiconductor layer; and

an active layer disposed between the first conductivity type nitride semiconductor layer and the second conductivity type nitride semiconductor layer;

a first electrode pad disposed over the first conductivity type nitride semiconductor layer;

a transparent electrode layer disposed over the second conductivity type nitride semiconductor layer;

a second electrode pad disposed over the transparent electrode layer;

a first extension extending from the first electrode pad; and

a second extension extending from the second electrode pad,

wherein the second extension is in electrical contact with the first conductivity type nitride semiconductor layer of the light emitting diode, and

wherein the light emitting diode is configured to emit light from the active layer towards a direction opposite to the first surface.

26. The light emitting diode chip of claim 25, further comprising an insulation layer disposed between the first extension and the first conductivity type nitride semiconductor layer of the light emitting diode to electrically insulate the first extension from the second conductivity type nitride semiconductor layer.

27. The light emitting diode chip of claim 26, wherein the insulation layer is disposed to cover a side surface of the light emitting diode such that the first extension and the second extension are insulated from the side surface of the light emitting diode.

28. The light emitting diode chip of claim 25, wherein the first electrode pad and the second electrode pad have a greater width than the first extension and the second extension, respectively.

29. The light emitting diode chip of claim 25, wherein the first extension is connected to the first conductivity type nitride semiconductor layer at discrete locations.

30. The light emitting diode chip of claim 25, wherein the first extension passes through a portion of the second conductivity type nitride semiconductor layer of the light emitting diode.

31. The light emitting diode chip of claim 25, wherein at least one of the first extension and the second extension is disposed along an edge of the light emitting diode chip.

32. The light emitting diode chip of claim 25, further comprising a current blocking layer formed below the second electrode pad and between the transparent electrode layer and the second conductivity type nitride semiconductor layer of the light emitting diode.

33. The light emitting diode chip of claim 25, wherein the second extension extends in parallel to the first extension.

34. The light emitting diode chip of claim 28, wherein the first surface of the substrate includes a pattern of protrusions;

and

wherein the pattern of protrusions are located under discrete locations.

35. The light emitting diode chip of claim 25, wherein the first surface of the substrate includes a light scattering structure.

36. The light emitting diode chip of claim 25, wherein the substrate includes a patterned sapphire substrate.

48. The light emitting diode chip of claim 26, wherein the insulation layer has a greater width than the first extension.

49. The light emitting diode chip of claim 48, wherein the insulation layer is not overlaid with the transparent electrode layer and contact to the first semiconductor layer.

50. The light emitting diode chip of claim 28, wherein the discrete locations includes a first exposed region and a second exposed region on a side surface of the light emitting diode;

and

wherein a distance of one of the first exposed region and the second exposed region is shorter than a distance between the first exposed region and the second exposed region.

37. A light emitting diode chip comprising:

a substrate including a patterned surface;

a light emitting diode section disposed over the patterned surface of the substrate; and

an inverse parallel diode section formed over the patterned surface of the substrate and inversely parallel to the light emitting diode section, each of the light emitting diode section and the inverse parallel diode section including a first conductivity type semiconductor layer;

a second conductivity type semiconductor layer; and

an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer;

a first electrode pad disposed over the inverse parallel diode section and electrically connected to the second conductivity type semiconductor layer of the inverse parallel diode section;

a second electrode pad disposed over the light emitting diode section and electrically connected to the second conductivity type semiconductor layer of the light emitting diode section;

a first extension extending from the first electrode pad along one side of the light emitting diode chip and electrically connected to the first conductivity type semiconductor layer of the light emitting diode section; and

a second extension extending from the second electrode pad and electrically connected to the first conductivity type semiconductor layer of the inverse parallel diode section,

38. The light emitting diode chip of claim 37, further comprising:

a transparent electrode layer formed over at least one of the light emitting diode section or the inverse parallel diode section to cover an upper surface of the light emitting diode section or the inverse parallel diode section.

39. The light emitting diode chip of claim 37, further comprising an insulation layer disposed over the second conductivity type semiconductor layer of the light emitting diode section and abutting a side surface of the transparent electrode layer.

40. The light emitting diode chip of claim 37, wherein the light emitting diode section has a greater size than the inverse parallel diode section.

41. The light emitting diode chip of claim 37, wherein the second conductivity type semiconductor layer of the inverse parallel diode section has a smaller thickness than the second conductivity type semiconductor layer of the light emitting diode section.

42. The light emitting diode chip of claim 37, wherein the inverse parallel diode section has a lower height than the light emitting diode section.

43. The light emitting diode chip of claim 37, wherein the first conductivity type semiconductor layer includes n-type GaN and the second conductivity type semiconductor layer includes p-type GaN.

44. The light emitting diode chip of claim 37, wherein the first extension and the second extension are insulated from side surfaces of the light emitting diode section and the inverse parallel diode section.

45. The light emitting diode chip of claim 37, wherein the second extension extends to the inverse parallel diode section such that an end portion of the second extension is electrically connected to the first conductivity type semiconductor layer of the inverse parallel diode section.

46. The light emitting diode chip of claim 37, wherein the second extension extends in parallel to the first extension.

47. The light emitting diode chip of claim 37, wherein the first extension and the second extension form an inverse parallel connection circuit and the light emitting diode section and the inverse parallel diode section are connected to each other in inverse parallel manner.