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High-Speed Compare Operation Using Magnetic Tunnel Junction Elements Including Two Different Anti-Ferromagnetic Layers

  • US 20150325279A1
  • Filed: 05/09/2014
  • Published: 11/12/2015
  • Est. Priority Date: 05/09/2014
  • Status: Active Grant
First Claim
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1. A method for performing a high-speed compare operation using at least one magnetic Tunnel Junction (MTJ) element including a non-volatile storage layer and a non-volatile sense layer separated by a tunnel junction layer, the method comprising:

  • writing a confidential data bit value into the MTJ element by fixing the non-volatile storage layer in an associated first storage magnetization direction determined by said confidential data bit value, and fixing the non-volatile sense layer in an associated preliminary storage magnetization direction that is opposite to the first magnetization direction, whereby said MTJ element exhibits a high resistance value;

    writing an input data bit value into the non-volatile sense layer by fixing the sense layer in an associated final storage magnetization direction determined by said input data bit value, whereby said MTJ element retains said high resistance value when said final storage magnetization direction is the same as said preliminary storage magnetization direction, and said MTJ element exhibits a low resistance value when said final storage magnetization direction is opposite to said preliminary storage magnetization direction; and

    determining if the input data bit value matches the confidential data bit value by measuring a resistance of said MTJ element.

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