DATA OPERATIONS IN NON-VOLATILE MEMORY
First Claim
Patent Images
1. A method comprising:
- in a data storage device including a non-volatile memory, performing;
receiving by the non-volatile memory an in-place refresh command to refresh data at a particular location in the non-volatile memory; and
in response to the in-place refresh command, re-writing the data into the particular location of the non-volatile memory to refresh the data at the particular location.
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Accused Products
Abstract
A method includes receiving an in-place refresh command to refresh data at a particular location in a non-volatile memory. The method also includes re-writing the data into the particular location of the non-volatile memory to refresh the data at the particular location in response to the in-place refresh command.
28 Citations
72 Claims
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1. A method comprising:
in a data storage device including a non-volatile memory, performing; receiving by the non-volatile memory an in-place refresh command to refresh data at a particular location in the non-volatile memory; and in response to the in-place refresh command, re-writing the data into the particular location of the non-volatile memory to refresh the data at the particular location. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method comprising:
in a data storage device including a non-volatile memory that is configured, for at least one value from the group containing the values zero and one, to execute a write command by skipping writing of the at least one value into a storage element when the storage element already contains the at least one value, performing; receiving by the non-volatile memory an in-place refresh command to refresh data at a particular location in the non-volatile memory; and in response to the in-place refresh command, re-writing the data into the particular location of the non-volatile memory to refresh the data at the particular location, wherein the re-writing includes for each storage element of the particular location for which the data is equal to the at least one value, writing the at least one value into the storage element. - View Dependent Claims (9, 10, 11, 12)
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13. A method comprising:
in a data storage device including a non-volatile memory, performing; receiving by the non-volatile memory an in-place refresh command to refresh data at a particular location in the non-volatile memory; and in response to the in-place refresh command, re-writing the data into the particular location of the non-volatile memory to refresh the data at the particular location, wherein re-writing the data includes bringing the storage elements of the particular location to a first common value and bringing the storage elements of the particular location to a second common value different from the first common value prior to writing the data to the storage elements of the particular location. - View Dependent Claims (14, 15)
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16. A method comprising:
in a memory device that is configurable, for at least one value from the group containing the values zero and one, to skip writing the at least one value into a storage element when the storage element already contains the at least one value, performing; receiving a write command to write data into a particular location in a non-volatile memory; and in response to the write command, determining whether to write the data according to a first mode that skips writing the at least one value into storage elements that contain the at least one value or according to a second mode that writes the at least one value into the storage elements that contain the at least one value. - View Dependent Claims (17, 18, 19, 20)
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21. A method comprising:
in a storage device that includes a controller and a memory device that is configurable, for at least one value from the group containing the values zero and one, to skip writing the at least one value into a storage element when the storage element already contains the at least one value, performing; receiving, by the controller, a write command to write data into a non-volatile memory; and in response to the write command, determining by the controller whether to write the data according to a first mode that skips writing the at least one value into storage elements that contain the at least one value or according to a second mode that writes the at least one value into the storage elements that contain the at least one value. - View Dependent Claims (22, 23, 24, 25)
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26. A method comprising:
in a data storage device including a non-volatile memory that is configured, for at least one value from the group containing the values zero and one, to execute a write command by skipping writing of the at least one value into a storage element when the storage element already contains the at least one value, performing; receiving by the non-volatile memory a write-all command to write data at a particular location in the non-volatile memory; and in response to the write-all command, writing the data into the particular location without skipping writing of the storage elements of the particular location that already contain the at least one value. - View Dependent Claims (27, 28, 29, 30, 31, 32, 33)
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34. A method comprising:
in a data storage device including a non-volatile memory, performing; receiving a write-all command to write data at a particular location in the non-volatile memory; and in response to the write-all command, writing the data into the particular location, wherein the writing of the data includes bringing the storage elements of the particular location to a first common value and bringing the storage elements of the particular location to a second common value different from the first common value prior to writing the data to the storage elements of the particular location. - View Dependent Claims (35, 36)
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37. A data storage device comprising:
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a non-volatile memory; and write circuitry configured, in response to the non-volatile memory receiving an in-place refresh command to refresh data at a particular location in the non-volatile memory, to re-write the data to the particular location of the non-volatile memory to refresh the data at the particular location. - View Dependent Claims (38, 39, 40, 41, 42, 43)
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44. A data storage device comprising:
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a non-volatile memory; and write circuitry that is configured, for at least one value from the group containing the values zero and one, to execute a write command by skipping writing of the at least one value into a storage element when the storage element already contains the at least one value, wherein in response to the non-volatile memory receiving an in-place refresh command to refresh data at a particular location in the non-volatile memory, the write circuitry is configured to re-write the data into the particular location of the non-volatile memory to refresh the data at the particular location, wherein re-writing the data includes for each storage element of the particular location for which the data is equal to the at least one value, writing the at least one value into the storage element. - View Dependent Claims (45, 46, 47, 48)
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49. A data storage device comprising:
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a non-volatile memory; and write circuitry that is configured, in response to the non-volatile memory receiving an in-place refresh command to refresh data at a particular location in the non-volatile memory, to re-write the data into the particular location of the non-volatile memory to refresh the data at the particular location, wherein re-writing the data includes bringing the storage elements of the particular location to a first common value and bringing the storage elements of the particular location to a second common value different from the first common value prior to writing the data to the storage elements of the particular location. - View Dependent Claims (50, 51)
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52. A data storage device comprising:
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a non-volatile memory; and write circuitry that is configurable, for at least one value from the group containing the values zero and one, to skip writing the at least one value into a storage element of the non-volatile memory when the storage element already contains the at least one value, and wherein, in response to receiving a write command from a controller to write data into a particular location in a non-volatile memory, the write circuitry is further configured to determine whether to write data according to a first mode that skips writing the at least one value into storage elements that contain the at least one value or according to a second mode that writes the at least one value into the storage elements that contain the at least one value. - View Dependent Claims (53, 54, 55, 56)
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57. A data storage device comprising:
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a controller; and a non-volatile memory coupled to the controller, the non-volatile memory including write circuitry that is configurable, for at least one value from the group containing the values zero and one, to skip writing the at least one value into a storage element of the non-volatile memory when the storage element already contains the at least one value, and wherein, in response to receiving a write command to write data into a particular location in the non-volatile memory, the controller is configured to determine whether to write the data according to a first mode that skips writing the at least one value into storage elements that contain the at least one value or according to a second mode that writes the at least one value into the storage elements that contain the at least one value. - View Dependent Claims (58, 59, 60, 61)
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62. A data storage device comprising:
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a non-volatile memory; and write circuitry configured, for at least one value of the group containing the values zero and one, to execute a write command by skipping writing of the at least one value into a storage element of the non-volatile memory when the storage element already contains the at least one value, wherein in response to the non-volatile memory receiving a write-all command from a controller to write data at a particular location in the non-volatile memory, the write circuitry is configured to write the data into the particular location without skipping writing of the storage elements of the particular location that already contain the at least one value. - View Dependent Claims (63, 64, 65, 66, 67, 68, 69)
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70. A data storage device comprising:
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a non-volatile memory; and write circuitry that is configured, in response to receiving a write-all command to write data at a particular location in the non-volatile memory, to write the data to the particular location, wherein the writing of the data includes bringing the storage elements of the particular location to a first common value and bringing the storage elements of the particular location to a second common value different from the first common value prior to writing the data to the storage elements of the particular location. - View Dependent Claims (71, 72)
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Specification