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PLASMA APPARATUS AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

  • US 20150325413A1
  • Filed: 04/29/2015
  • Published: 11/12/2015
  • Est. Priority Date: 05/12/2014
  • Status: Active Grant
First Claim
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1. A plasma apparatus comprising:

  • a process chamber having an inner space;

    a chuck disposed in the process chamber, the chuck having a top surface configured to load a substrate;

    a gas supply unit supplying a process gas into the process chamber;

    a plasma generating unit generating plasma over the chuck; and

    a direct current (DC) power generator configured to apply a DC pulse signal having repetitive periods to the chuck, each period of the DC pulse signal comprising a negative pulse duration during which a negative pulse is applied;

    a positive pulse duration during which a positive pulse is applied; and

    a pulse-off duration, after the positive pulse duration and prior to subsequent application of a negative pulse, during which the negative pulse and the positive pulse are turned off.

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