UNITIZED CONFINEMENT RING ARRANGEMENTS AND METHODS THEREOF
First Claim
1. An arrangement for performing pressure control in a processing chamber of a plasma processing system during processing of a substrate, said arrangement comprising:
- an upper electrode;
a lower electrode;
a unitized confinement ring arrangement comprised of a single ring including slots; and
at least one plunger configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path and a second gas conductance path to perform the pressure control,wherein said upper electrode, said lower electrode and said unitized confinement ring arrangement are configured at least for surrounding a confined chamber region, wherein said confined chamber region is capable of supporting a plasma for etching said substrate during substrate processing and said unitized confinement ring arrangement is configured for confining said plasma within said confined chamber region,wherein said first gas conductance path is formed between a first protrusion of said upper electrode and a second protrusion of said unitized confinement ring arrangement, at least a portion of said second protrusion overlaps said first protrusion, said pressure control within said confined chamber region is provided by moving said at least one plunger vertically to adjust the length of said first gas conductance path, said second gas conductance path is formed between a bottom surface of said unitized confinement ring arrangement and a top surface of said lower electrode, at least a portion of the width of said bottom surface of said unitized confinement ring arrangement overlaps said top surface of said lower electrode, and said pressure control within said confined chamber region is provided by moving said at least one plunger vertically to adjust the width of said second gas conductance path.
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Accused Products
Abstract
An arrangement for performing pressure control in a plasma processing chamber comprising an upper electrode, a lower electrode, a unitized confinement ring arrangement wherein the upper electrode, the lower electrode and the unitized confinement ring arrangement are configured at least for surrounding a confined chamber region to facilitate plasma generation and confinement therein. The arrangement further includes at least one plunger configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path and a second gas conductance path to perform the pressure control, wherein the first gas conductance path is formed between the upper electrode and the unitized confinement ring arrangement and the second gas conductance path is formed between the lower electrode and the single unitized ring arrangement.
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Citations
13 Claims
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1. An arrangement for performing pressure control in a processing chamber of a plasma processing system during processing of a substrate, said arrangement comprising:
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an upper electrode; a lower electrode; a unitized confinement ring arrangement comprised of a single ring including slots; and at least one plunger configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path and a second gas conductance path to perform the pressure control, wherein said upper electrode, said lower electrode and said unitized confinement ring arrangement are configured at least for surrounding a confined chamber region, wherein said confined chamber region is capable of supporting a plasma for etching said substrate during substrate processing and said unitized confinement ring arrangement is configured for confining said plasma within said confined chamber region, wherein said first gas conductance path is formed between a first protrusion of said upper electrode and a second protrusion of said unitized confinement ring arrangement, at least a portion of said second protrusion overlaps said first protrusion, said pressure control within said confined chamber region is provided by moving said at least one plunger vertically to adjust the length of said first gas conductance path, said second gas conductance path is formed between a bottom surface of said unitized confinement ring arrangement and a top surface of said lower electrode, at least a portion of the width of said bottom surface of said unitized confinement ring arrangement overlaps said top surface of said lower electrode, and said pressure control within said confined chamber region is provided by moving said at least one plunger vertically to adjust the width of said second gas conductance path. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An arrangement for performing pressure control in a processing chamber of a plasma processing system during processing of a substrate, said arrangement comprising:
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an upper electrode; a lower electrode; a unitized confinement ring arrangement comprised of a single ring including slots, wherein said upper electrode, said lower electrode and said unitized confinement ring arrangement are configured at least for surrounding a confined chamber region, wherein said confined chamber region is capable of supporting a plasma for etching said substrate during substrate processing and said unitized confinement ring arrangement is configured for confining said plasma within said confined chamber region; a valve configured at least for controlling pressure within said confined chamber region; and at least one plunger configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path and a second gas conductance path to perform the pressure control, wherein said first gas conductance path is formed between a first protrusion of said upper electrode and a second protrusion of said unitized confinement ring arrangement, at least a portion of said second protrusion overlaps said first protrusion, said pressure control within said confined chamber region is provided by moving said at least one plunger vertically to adjust the length of said first gas conductance path, said second gas conductance path is formed between said lower electrode and said unitized confinement ring arrangement, and said pressure control within said confined chamber region is provided by moving said at least one plunger vertically to adjust the width of said second gas conductance path. - View Dependent Claims (10, 11, 12, 13)
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Specification