POWER SEMICONDUCTOR MODULE WITH SWITCHING DEVICE AND ASSEMBLY

• US 20150325494A1
• Filed: 05/10/2015
• Published: 11/12/2015
• Est. Priority Date: 05/09/2014
• Status: Active Grant

• Current Assignee: Semikron Elektronik GmbH & Company KG (Heilbronner Holding GbR)
• Original Assignee: Semikron Elektronik GmbH & Company KG (Heilbronner Holding GbR)
• Inventors: KRONEDER, Christian, Tauscher, Bjrn, Walter, Alexej, Gbl, Christian, Kobolla, Harald
• Granted Patent: US 9,627,343 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2023/4031 Packaged discrete devices, e.g. to-3 housings, diodes
• CPC Class Codes: H01L 2023/4056 heatsink to additional heatsink
• CPC Class Codes: H01L 2023/4087 Mounting accessories, interposers, clamping or screwing parts
• CPC Class Codes: H01L 2224/37099 Material
• CPC Class Codes: H01L 2224/72 Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
• CPC Class Codes: H01L 2224/73263 Layer and strap connectors
• CPC Class Codes: H01L 2224/8384 Sintering
• CPC Class Codes: H01L 2224/84 using a strap connector
• CPC Class Codes: H01L 23/043 the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
• CPC Class Codes: H01L 23/13 characterised by the shape
• CPC Class Codes: H01L 23/296 Organo-silicon compounds
• CPC Class Codes: H01L 23/3672 Foil-like cooling fins or heat sinks being part of lead-frames H01L23/49568
• CPC Class Codes: H01L 23/3675 characterised by the shape of the housing
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/4006 with bolts or screws
• CPC Class Codes: H01L 23/492 Bases or plates or solder therefor
• CPC Class Codes: H01L 23/4985 Flexible insulating substrates H01L23/49572 and H01L23/49855 take precedence
• CPC Class Codes: H01L 23/49861 Lead-frames fixed on or encapsulated in insulating substrates H01L23/4985, H01L23/49805 take precedence
• CPC Class Codes: H01L 24/34 Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/90 Methods for connecting semiconductor or solid state bodies using means for bonding not being attached to, or not being formed on, the body surface to be connected, e.g. pressure contacts using springs or clips
• CPC Class Codes: H01L 25/072 : the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1203 : Rectifying Diode
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

A power semiconductor module and an arrangement including it. The module includes a housing, a switching device having a substrate connected to the housing, a connecting device, load connection devices and a pressure device movable relative to the housing. The substrate has a first central passage and conductor tracks which are electrically insulated from one another. A power semiconductor component sits on a conductor track. The connecting device has two main surfaces and an electrically conductive film. The pressure device has a pressure body with a second passage, in alignment with the first passage and a first recess. A pressure element projects out of the recess, and presses onto a section of the second main surface. This section is within the surface of the component projects normal to the substrate. The first and second passages receive a fastener which force-fittingly fastens the module to the cooling device.

Claims

1. A power semiconductor module comprising:

a housing;

a switching device;

a substrate connected to said housing, said substrate having a first central passage opening and a plurality of conductor tracks which are electrically insulated from one another;

a power semiconductor component arranged on, and cohesively connected to, one of said plurality of conductor tracks of said substrate;

a connecting device having first and second main surfaces and an electrically conductive film between said first and second main surfaces, said connecting device connecting said switching device in an internally circuit-conforming manner;

a plurality of load connection devices;

a pressure device which is movable relative to said housing in a first direction generally normal to said substrate, and having a pressure body with a second passage opening, said second passage opening being in alignment with said first passage opening, said pressure device further having a first recess;

a pressure element arranged in said recess, such that it projects out of said recess, said pressure element pressing onto a section of said second main surface of said connecting device, said section being arranged within the surface of said power semiconductor component and projecting therefrom in a second direction generally normal to said substrate; and

a fastener disposed at least partially within said first and second passage openings for fastening said power semiconductor module on a cooling device in a force-fitting manner.

2. The power semiconductor module of claim 1,

wherein said housing has a third passage opening which is disposed in alignment with said first and second passage openings;

and

wherein said fastener is also disposed at least partially within said third passage opening.

3. The power semiconductor module of claim 1,

wherein said connecting device comprises a film stack of at least three layers, at least one of said at least three layers being an electrically conductive film, and at least another one of said at least three layers being an electrically insulating film;

and

wherein said at least three layers of said film stack are alternating between one of said at least one conductive film and one of said at least one of said insulating film.

4. The power semiconductor module of claim 1, wherein

said first recess in said pressure body consists of a depression starting from a first main surface of said pressure body, which main surface faces said substrate.

5. The power semiconductor module of claim 1, wherein

said first recess in said pressure body comprises a depression starting from a first main surface of said pressure body, which main surface faces said substrate, and further comprises a cutout, which passes through said pressure body to a second main surface of said pressure body, with an opening disposed therein.

6. The power semiconductor module of claim 1, wherein at least one of said housing and one of said plurality of load connection devices has first guide elements, and said pressure device has second guide elements, wherein said first and second guide elements co-operate to permit a movement of said pressure device with respect to said housing with arranged load connection devices only in a direction normal to said substrate.

7. The power semiconductor module of claim 1, wherein said pressure body is composed of a high-temperature-resistant thermoplastic material and said pressure element is composed of a silicone rubber.

8. The power semiconductor module of claim 7, wherein said high-temperature-resistant thermoplastic material is polyphenylene sulphide, and said silicone rubber is liquid silicone.

9. The power semiconductor module of claim 1

wherein said pressure body has a second recess on a second main surface thereof, said second recess having a base which forms an auxiliary surface;

and

wherein the power semiconductor module further comprises a flat metal body with a further passage opening therein, which further passage opening is in alignment with said first and second passage openings and is disposed in said second recess.

10. The power semiconductor module of claim 1 wherein the surface area of said section of said second main surface of said connecting device takes up at least about 20% of the surface of said power semiconductor component.

11. The power semiconductor module of claim 10 wherein the surface area of said section of said second main surface of said connecting device takes up at least about 50% of the surface of said power semiconductor component.

12. The power semiconductor module of claim 1, wherein the ratio of lateral extent to vertical extent of said pressure body is at least about 3 to 1.

13. The power semiconductor module of claim 12, wherein the ratio of lateral extent to vertical extent of said pressure body is at least about 5 to 1.

14. The power semiconductor module of claim 1

wherein said conductor tracks are located on a top face of said substrate;

and

wherein said top face of said substrate, including said conductor tracks, said power semiconductor component and said connecting device, is encapsulated in a moisture-tight manner by an encapsulation compound.

15. The power semiconductor module of claim 1, wherein sections of said load connection devices project through said housing and form external load contact devices there.

16. An arrangement comprising:

a power semiconductor module having

a housing;

a switching device;

a substrate connected to said housing, said substrate having a first central passage opening and a plurality of conductor tracks which are electrically insulated from one another;

a power semiconductor component arranged on, and cohesively connected to, one of said plurality of conductor tracks of said substrate;

a connecting device having first and second main surfaces and an electrically conductive film between said first and second main surfaces, said connecting device connecting said switching device in an internally circuit-conforming manner;

a plurality of load connection devices;

a pressure device which is movable relative to said housing in a first direction generally normal to said substrate, and having a pressure body with a second passage opening, said second passage opening being in alignment with said first passage opening, said pressure device further having a first recess; and

a fastener disposed at least partially within said first and second passage openings; and

a cooling device;

wherein said fastener introduces force onto said pressure device so that said pressure device connects said substrate to said cooling device in a force-fitting manner.

17. The arrangement of claim 16, further comprising:

a thermally conductive paste arranged between said substrate and said cooling device and having a thickness of less than about 20 μ

m.

18. The arrangement of claim 17, wherein said thickness of said thermally conductive paste is less than about 10 μ

m.

19. The arrangement of claim 18, wherein said thickness of said thermally conductive paste is less than about 5 μ

m.

20. The arrangement of claim 16, wherein said cooling device is at least one of a base plate of said power semiconductor module and an external heat sink which is associated with said power semiconductor module.

21. The arrangement of claim 16, wherein said housing includes at least one pin which projects into at least one of an associated third recess in said cooling device and in a heat sink and prevents rotation of said housing in relation to at least one of said cooling device and said heat sink.