SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME
First Claim
1. A light emitting device, comprising:
- an adhesion layer;
a light-emitting structure disposed on the adhesion layer, the light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the light-emitting structure having an inclined side surface such that an area of a bottom surface of the light-emitting structure is larger than an area of a top surface of the light-emitting structure;
a first electrode including nickel, the first electrode disposed on the adhesion layer and disposed away from a side surface of the adhesion layer such that the first electrode is not beyond the bottom surface of the light-emitting structure;
a channel layer disposed on the adhesion layer, the channel layer having a first portion disposed between the adhesion layer and the light-emitting structure;
an insulating layer disposed from the channel layer to the top surface of the light-emitting structure through the inclined side surface of the light-emitting structure;
a second electrode disposed on the light-emitting structure; and
a current blocking layer disposed between the adhesion layer and the light-emitting structure, the current blocking layer positioned corresponding to a position of the second electrode.
1 Assignment
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Accused Products
Abstract
A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.
2 Citations
20 Claims
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1. A light emitting device, comprising:
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an adhesion layer; a light-emitting structure disposed on the adhesion layer, the light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the light-emitting structure having an inclined side surface such that an area of a bottom surface of the light-emitting structure is larger than an area of a top surface of the light-emitting structure; a first electrode including nickel, the first electrode disposed on the adhesion layer and disposed away from a side surface of the adhesion layer such that the first electrode is not beyond the bottom surface of the light-emitting structure; a channel layer disposed on the adhesion layer, the channel layer having a first portion disposed between the adhesion layer and the light-emitting structure; an insulating layer disposed from the channel layer to the top surface of the light-emitting structure through the inclined side surface of the light-emitting structure; a second electrode disposed on the light-emitting structure; and a current blocking layer disposed between the adhesion layer and the light-emitting structure, the current blocking layer positioned corresponding to a position of the second electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification