×

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

  • US 20150325783A1
  • Filed: 07/13/2015
  • Published: 11/12/2015
  • Est. Priority Date: 09/14/2010
  • Status: Active Grant
First Claim
Patent Images

1. A magnetic tunnel junction (MTJ) memory element comprising:

  • a seed layer; and

    a magnetic fixed layer including a first magnetic fixed sublayer formed adjacent to said seed layer and a second magnetic fixed sublayer separated from said first magnetic fixed sublayer by a first perpendicular enhancement layer, said first and second magnetic fixed sublayers having a first fixed magnetization direction substantially perpendicular to layer planes thereof.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×