MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
First Claim
1. A magnetic tunnel junction (MTJ) memory element comprising:
- a seed layer; and
a magnetic fixed layer including a first magnetic fixed sublayer formed adjacent to said seed layer and a second magnetic fixed sublayer separated from said first magnetic fixed sublayer by a first perpendicular enhancement layer, said first and second magnetic fixed sublayers having a first fixed magnetization direction substantially perpendicular to layer planes thereof.
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Abstract
The present invention is directed to an MTJ memory element including a magnetic free layer structure which includes one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure comprising a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated therefrom by a perpendicular enhancement layer with the first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the perpendicular enhancement layer; and a magnetic fixed layer comprising first and second magnetic fixed sublayers with the second magnetic fixed sublayer formed adjacent to the anti-ferromagnetic coupling layer opposite the second magnetic reference layer.
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Citations
22 Claims
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1. A magnetic tunnel junction (MTJ) memory element comprising:
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a seed layer; and a magnetic fixed layer including a first magnetic fixed sublayer formed adjacent to said seed layer and a second magnetic fixed sublayer separated from said first magnetic fixed sublayer by a first perpendicular enhancement layer, said first and second magnetic fixed sublayers having a first fixed magnetization direction substantially perpendicular to layer planes thereof. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification