SENSE STRUCTURE BASED ON MULTIPLE SENSE AMPLIFIERS WITH LOCAL REGULATION OF A BIASING VOLTAGE

• US 20150332739A1
• Filed: 05/04/2015
• Published: 11/19/2015
• Est. Priority Date: 05/13/2014
• Status: Active Grant

• Current Assignee: STMicroelectronics International N.V. (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Inventors: CONTE, Antonino, MICCICHE', Mario, PAGANO, SantiNunzioAntonino
• Granted Patent: US 9,679,618 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G11C 16/24 Bit-line control circuits
• CPC Class Codes: G11C 16/28 using differential sensing or reference cells, e.g. dummy cells
• CPC Class Codes: G11C 2207/002 Isolation gates, i.e. gates coupling bit lines to the sense amplifier
• CPC Class Codes: G11C 7/062 Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
• CPC Class Codes: G11C 7/1051 Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
• CPC Class Codes: G11C 7/12 Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

Abstract

A sense structure may include sense amplifiers each having measuring and reference terminals for receiving a measuring and a reference current, respectively, output circuitry for providing an output voltage based upon the measuring and reference currents, and voltage regulating circuitry in cascode configuration for regulating a voltage at the measuring and reference terminals. The regulating circuitry may include measuring and regulating transistors and a reference regulating transistor having a first conduction terminal coupled with the measuring terminal and with the reference terminal, respectively, a second conduction terminal coupled with the output circuitry and a control terminal coupled with a biasing terminal. Biasing circuitry is for providing a biasing voltage to the biasing terminal, and common regulating circuitry is for regulating the biasing voltage. Each sense amplifier may also include local regulating circuitry for regulating the biasing voltage applied to the biasing terminal.

Claims

1-9. -9. (canceled)

10. A sense structure comprising:

a plurality of sense amplifiers, each comprising

at least one measuring terminal and a reference terminal configured to receive a measuring current and a reference current, respectively,

output circuitry configured to provide an output voltage based upon a comparison between the measuring current and the reference current,

a biasing terminal, and

voltage regulating circuitry in a cascode configuration and configured to regulate a voltage at the measuring terminal and at the reference terminal, the voltage regulating circuitry comprising a measuring regulating transistor and a reference regulating transistor having first conduction terminals coupled to the measuring and reference terminals, respectively, second conduction terminals coupled to the output circuitry, and control terminals coupled to the biasing terminal;

biasing circuitry configured to provide a biasing voltage to the biasing terminal of the plurality of sense amplifiers;

common regulating circuitry configured to regulate the biasing voltage for the plurality of sense amplifiers;

each sense amplifier further comprising local regulating circuitry configured to regulate the biasing voltage applied to the biasing terminal; and

switching circuitry selectively controllable and configured to couple the local regulating circuitry of each of the plurality of sense amplifiers to the common regulating circuitry to refresh the local regulating circuitry in a rest condition and to decouple the local regulating circuitry of each of the plurality of sense amplifiers from the common regulating circuitry in an operative condition.

11. The sense structure according to claim 10, wherein the biasing circuitry comprises an output terminal;

wherein the common regulating circuitry comprises a common capacitor coupled between the output terminal and configured to provide the biasing voltage and a ground terminal configured to receive a ground voltage; and

wherein in each sense amplifier the local regulating circuitry comprises a local capacitor coupled between the biasing terminal and the ground terminal.

12. The sense structure according to claim 11, wherein the switching circuitry comprises a switch for each sense amplifier, the switch being coupled between the output terminal of the biasing circuitry and the biasing terminal.

13. The sense structure according to claim 10, wherein each sense amplifier comprises further switching circuitry configured to selectively couple the reference terminal to the measuring terminal during a pre-charging phase of the measuring terminal.

14. The sense structure according to claim 10, wherein each sense amplifier comprises current providing circuitry configured to provide an internal current, summing circuitry configured to sum the measuring current and the internal current to define a sum current, mirroring circuitry configured to mirror the sum current, subtraction circuitry configured to subtract subtracting the reference current from the mirrored sum current to define a difference current, and output circuitry configured to provide an output voltage based upon a comparison between the difference current and the internal current.

15. The sense structure according to claim 14, wherein the output circuitry has a measuring node and a reference node coupled to the second conduction terminal of the measuring regulating transistor and of the reference regulating transistor, respectively, and wherein the output circuitry comprises:

a first internal measuring transistor and a first internal reference transistor having a first conduction terminal coupled to the measuring node and to the reference node, respectively, and a control terminal coupled to a first internal biasing terminal for receiving a first internal biasing voltage configured to bias the first internal measuring transistor and the first internal reference transistor to conduct the internal current;

a second internal measuring transistor and a second internal reference transistor having a first conduction terminal coupled to a ground terminal, a second conduction terminal coupled to a second conduction terminal of the first internal measuring transistor and of the first internal reference transistor, respectively, and a control terminal coupled to a second internal biasing terminal for receiving a second internal biasing voltage configured to bias the second internal measuring transistor and the second internal reference transistor to conduct the internal current; and

a measuring conversion transistor and a reference conversion transistor having a first conduction terminal coupled to a power supply terminal for receiving a supply voltage, a second conduction terminal coupled to the measuring node and to the reference node, respectively, and a control terminal coupled to the second conduction terminal of the first internal measuring transistor.

16. A non-volatile memory device comprising:

a plurality of memory cells; and

a sense structure coupled to the plurality of memory comprising

a plurality of sense amplifiers, each comprising

at least one measuring terminal and a reference terminal configured to receive a measuring current and a reference current, respectively,

output circuitry configured to provide an output voltage based upon a comparison between the measuring current and the reference current,

a biasing terminal, and

voltage regulating circuitry configured to regulate a voltage at the measuring terminal and at the reference terminal, the voltage regulating circuitry comprising a measuring regulating transistor and a reference regulating transistor having first conduction terminals coupled to the measuring and reference terminals, respectively, second conduction terminals coupled to the output circuitry, and control terminals coupled to the biasing terminal,

biasing circuitry configured to provide a biasing voltage to the biasing terminal of the plurality of sense amplifiers,

common regulating circuitry configured to regulate the biasing voltage for the plurality of sense amplifiers,

each sense amplifier further comprising local regulating circuitry configured to regulate the biasing voltage applied to the biasing terminal,

switching circuitry selectively controllable and configured to couple the local regulating circuitry of each of the plurality of sense amplifiers to the common regulating circuitry to refresh the local regulating circuitry in a rest condition and to decouple the local regulating circuitry of each of the plurality of sense amplifiers from the common regulating circuitry in an operative condition.

17. The non-volatile memory device according to claim 16, wherein the biasing circuitry comprises an output terminal;

wherein the common regulating circuitry comprises a common capacitor coupled between the output terminal and configured to provide the biasing voltage and a ground terminal configured to receive a ground voltage; and

wherein in each sense amplifier the local regulating circuitry comprises a local capacitor coupled between the biasing terminal and the ground terminal.

18. The non-volatile memory device according to claim 17, wherein the switching circuitry comprises a switch for each sense amplifier, the switch being coupled between the output terminal of the biasing circuitry and the biasing terminal.

19. The non-volatile memory device according to claim 16, wherein each sense amplifier comprises further switching circuitry configured to selectively couple the reference terminal to the measuring terminal during a pre-charging phase of the measuring terminal.

20. The non-volatile memory device according to claim 16, wherein each sense amplifier comprises current providing circuitry configured to provide an internal current, summing circuitry configured to sum the measuring current and the internal current to define a sum current, mirroring circuitry configured to mirror the sum current, subtraction circuitry configured to subtract subtracting the reference current from the mirrored sum current to define a difference current, and output circuitry configured to provide an output voltage based upon a comparison between the difference current and the internal current.

21. The non-volatile memory device according to claim 20, wherein the output circuitry has a measuring node and a reference node coupled to the second conduction terminal of the measuring regulating transistor and of the reference regulating transistor, respectively, and wherein the output circuitry comprises:

a first internal measuring transistor and a first internal reference transistor having a first conduction terminal coupled to the measuring node and to the reference node, respectively, and a control terminal coupled to a first internal biasing terminal for receiving a first internal biasing voltage configured to bias the first internal measuring transistor and the first internal reference transistor to conduct the internal current;

a second internal measuring transistor and a second internal reference transistor having a first conduction terminal coupled to a ground terminal, a second conduction terminal coupled to a second conduction terminal of the first internal measuring transistor and of the first internal reference transistor, respectively, and a control terminal coupled to a second internal biasing terminal for receiving a second internal biasing voltage configured to bias the second internal measuring transistor and the second internal reference transistor to conduct the internal current; and

a measuring conversion transistor and a reference conversion transistor having a first conduction terminal coupled to a power supply terminal for receiving a supply voltage, a second conduction terminal coupled to the measuring node and to the reference node, respectively, and a control terminal coupled to the second conduction terminal of the first internal measuring transistor.

22. A sensing method comprising:

receiving at least one measuring current and a reference current at a measuring terminal and at a reference terminal, respectively, of each one of a plurality of sense amplifiers;

regulating a biasing voltage for the plurality of sense amplifiers using common regulating circuitry;

providing the biasing voltage to a biasing terminal of the plurality of sense amplifiers;

regulating a voltage at the measuring and reference terminals of each of the plurality of sense amplifiers by voltage regulating circuitry comprising a measuring regulating transistor and a reference regulating transistor having first conduction terminals coupled to the measuring terminal and to the reference terminal, respectively, second conduction terminals coupled to output circuitry of a sense amplifier, and control terminals coupled to the biasing terminal;

providing an output voltage based upon a comparison between the measuring current and the reference current by the output circuitry of each of the plurality of sense amplifiers;

further regulating the biasing voltage at the biasing terminal of each of the plurality of sense amplifiers by local regulating circuitry; and

selectively controlling switching circuitry to couple the local regulating circuitry of each of the plurality of sense amplifiers to the common regulating circuitry to refresh the local regulating circuitry in a rest condition and to decouple the local regulating circuitry of each of the plurality of sense amplifiers from the common regulating circuitry in an operative condition.

23. The method according to claim 22, wherein the biasing circuitry comprises an output terminal;

wherein the common regulating circuitry comprises a common capacitor coupled between the output terminal and configured to provide the biasing voltage and a ground terminal configured to receive a ground voltage; and

wherein in each sense amplifier the local regulating circuitry comprises a local capacitor coupled between the biasing terminal and the ground terminal.

24. The method according to claim 23, wherein selectively controlling the switching circuitry comprises selectively controlling a switch for each sense amplifier, the switch being coupled between the output terminal of the biasing circuitry and the biasing terminal.