METHOD OF OPERATING SEMICONDUCTOR DEVICE
First Claim
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1. A method of operating a semiconductor device, the method comprising:
- programming a first cell;
verifying a second cell adjacent to the first cell; and
repeating the programming of the first cell, and the verifying of the second cell until the verifying of the second cell passes,wherein a threshold voltage of the second cell is increased by performing the programming the first cell.
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Abstract
A method of operating a semiconductor device includes programming a first cell, verifying a second cell adjacent to the first cell, and repeating the programming of the first cell and the verifying of the second cell until the verifying of the second cell passes.
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Citations
20 Claims
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1. A method of operating a semiconductor device, the method comprising:
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programming a first cell; verifying a second cell adjacent to the first cell; and repeating the programming of the first cell, and the verifying of the second cell until the verifying of the second cell passes, wherein a threshold voltage of the second cell is increased by performing the programming the first cell. - View Dependent Claims (2, 3, 4, 5)
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6. A method of operating a semiconductor device including a memory block having a plurality of cell strings comprising dummy cells coupled between selection transistors and memory cells, the method comprising:
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programming the dummy cells when an erase operation on the memory block is completed; verifying the selection transistors; and repeating the programming of the dummy cells, and the verifying of the selection transistors until the verifying of the selection transistors passes, wherein a threshold voltage of the selection transistor is increased by performing the programming the dummy cells. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13)
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14. A method of operating a semiconductor device including a memory block having a plurality of cell strings comprising dummy cells coupled between selection transistors and memory cells, the method comprising:
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performing an erase operation on the memory block; performing a program operation on the dummy cells to trap electrons of the dummy cells; performing a verify operation on the selection transistors; and repeating the performing the program operation on the dummy cells and the performing of the verify operation until the verify operation passes, wherein a density of the electrons in a channel region adjacent to the selection transistors is reduced by performing the program operation on the dummy cells. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification