METHOD FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR CHIPS, AND OPTOELECTRONIC SEMICONDUCTOR CHIP
First Claim
1. A method for producing a plurality of optoelectronic semiconductor chips, each of which comprises a plurality of pixels, having the steps:
- a) providing a semiconductor layer sequence having an active region intended to generate and/or detect radiation, which is formed between a first semiconductor layer and a second semiconductor layer;
b) providing a carrier having a plurality of first connection surfaces;
c) fastening the semiconductor layer sequence on the carrier, so that the first semiconductor layer is electrically conductively connected to the first connection surfaces;
d) forming separating trenches in the semiconductor layer sequence which is fastened on the carrier in order to form the pixels, the separating trenches extending through the semiconductor layer sequence;
e) forming a contact layer, which connects the second semiconductor layer electrically conductively to a second connection surface of the carrier; and
f) singulating the carrier into the plurality of semiconductor chips, each of which comprises a plurality of pixels.
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Accused Products
Abstract
What is specified is a method for producing a plurality of optoelectronic semiconductor chips (1) each having a plurality of pixels (25). A semiconductor layer sequence (2) having an active region (20) provided for generating and/or detecting radiation, said active region being formed between a first semiconductor layer (21) a second semiconductor layer (22), is provided. The semiconductor layer sequence is fixed to a carrier (5) with a plurality of first connection areas (51), such that the first semiconductor layer is electrically conductively connected to the first connection areas. Isolating trenches (27) are formed in the semiconductor layer sequence fixed to the carrier, in order to form the pixels, wherein the isolating trenches extend through the semiconductor layer sequence. A contact layer (6) is formed, which electrically conductively connects the second semiconductor layer to a second connection area (52) of the carrier. The carrier is singulated into the plurality of semiconductor chips each having a plurality of pixels. Furthermore, an optoelectronic semiconductor chip (1) is specified.
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Citations
20 Claims
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1. A method for producing a plurality of optoelectronic semiconductor chips, each of which comprises a plurality of pixels, having the steps:
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a) providing a semiconductor layer sequence having an active region intended to generate and/or detect radiation, which is formed between a first semiconductor layer and a second semiconductor layer; b) providing a carrier having a plurality of first connection surfaces; c) fastening the semiconductor layer sequence on the carrier, so that the first semiconductor layer is electrically conductively connected to the first connection surfaces; d) forming separating trenches in the semiconductor layer sequence which is fastened on the carrier in order to form the pixels, the separating trenches extending through the semiconductor layer sequence; e) forming a contact layer, which connects the second semiconductor layer electrically conductively to a second connection surface of the carrier; and f) singulating the carrier into the plurality of semiconductor chips, each of which comprises a plurality of pixels. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An optoelectronic semiconductor chip having a semiconductor layer sequence that comprises an active region intended to generate and/or receive radiation, which is arranged between a first semiconductor layer and a second semiconductor layer, wherein
the semiconductor layer sequence is subdivided into a plurality of pixels; -
the semiconductor chip comprises a carrier, on which the semiconductor layer sequence is arranged and which comprises a driver circuit for the individual pixels; the carrier comprises, for each pixel, a first connection surface which is electrically conductively connected to the first semiconductor layer of the pixels; and the second semiconductor layer is connected electrically conductively to a second connection surface by a contact layer, the contact layer covering a radiation transmission surface facing away from the carrier at least in regions. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. (canceled)
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20. An optoelectronic semiconductor chip having a semiconductor layer sequence that comprises an active region intended to generate and/or receive radiation, which is arranged between a first semiconductor layer and a second semiconductor layer, wherein
the semiconductor layer sequence is subdivided into a plurality of pixels; -
the semiconductor chip comprises a carrier, on which the semiconductor layer sequence is arranged and which comprises a driver circuit for the individual pixels; the carrier comprises, for each pixel, a first connection surface which is electrically conductively connected to the first semiconductor layer of the pixels; the second semiconductor layer is connected electrically conductively to a second connection surface by a contact layer, the contact layer covering a radiation transmission surface facing away from the carrier at least in regions; and the first connection surface extends around the at least one second connection surface or along at least two edges of the second connection surface.
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Specification