LIGHT EMITTING DEVICE PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF

• US 20150333227A1
• Filed: 05/14/2015
• Published: 11/19/2015
• Est. Priority Date: 05/14/2014
• Status: Abandoned Application

• Current Assignee: Genesis Photonics Inc.
• Original Assignee: Genesis Photonics Inc.
• Inventors: Lee, Hao-Chung, Lin, Yu-Feng
• Application Number:
  US14/711,798
• Publication Number:
  US 20150333227A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/18 High density interconnect [HDI] connectors; Manufacturing methods related thereto
• CPC Class Codes: H01L 2224/19 Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/9222 Sequential connecting processes
• CPC Class Codes: H01L 2924/18162 of a chip with build-up interconnect
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/52 Encapsulations
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting device package structure and a manufacturing method thereof are provided. The light emitting device package structure includes a light emitting device and a protecting element. The light emitting device has an upper surface and a lower surface opposite to each other, a side surface connecting the upper surface and the lower surface and a first electrode pad and a second electrode pad located on the lower surface and separated from each other. The protecting element encapsulates the side surface of the light emitting device and exposes at least portion of the upper surface, at least portion of a first bottom surface of the first electrode pad and at least portion of a second bottom surface of the second electrode pad.

Claims

1. A light emitting device package structure, comprising:

a light emitting device, having an upper surface and a lower surface opposite to each other, a side surface connecting the upper surface and the lower surface and a first electrode pad and a second electrode pad located on the lower surface and separated from each other; and

a protecting element, encapsulating the side surface of the light emitting device and exposing at least portion of the upper surface of the light emitting device, at least portion of a first bottom surface of the first electrode pad and at least portion of a second bottom surface of the second electrode pad.

2. The light emitting device package structure as claimed in claim 1, wherein the upper surface of the light emitting device is aligned with a top surface of the protecting element.

3. The light emitting device package structure as claimed in claim 1, further comprising:

a first extension electrode, disposed on the bottom surface of the protecting element, and electrically connected to the first electrode pad; and

a second extension electrode, disposed on the bottom surface of the protecting element, and electrically connected to the second electrode pad, wherein the first extension electrode and the second extension electrode are separated from each other and are exposed from at least a part of the bottom surface of the protecting element.

4. The light emitting device package structure as claimed in claim 3, wherein an area of the first extension electrode is greater than an area of the first electrode pad, and an area of the second extension electrode is greater than an area of the second electrode pad.

5. The light emitting device package structure as claimed in claim 3, wherein an edge of the first extension electrode and an edge of the second extension electrode are aligned with an edge of the protecting element.

6. The light emitting device package structure as claimed in claim 1, wherein the light emitting device is a light emitting diode chip with a light emitting wavelength in a range of 315 nanometers to 780 nanometers.

7. The light emitting device package structure as claimed in claim 1, wherein a reflection rate of the protecting element is at least greater than 90%.

8. The light emitting device package structure as claimed in claim 1, further comprising:

an encapsulation adhesive layer, disposed on the upper surface of the light emitting device.

9. The light emitting device package structure as claimed in claim 8, wherein the encapsulation adhesive layer covers at least portion of a top surface of the protecting element.

10. The light emitting device package structure as claimed in claim 8, wherein at least one wavelength converting material is doped in the encapsulation adhesive layer.

11. The light emitting device package structure as claimed in claim 10, further comprising:

a translucent layer disposed on the upper surface of the light emitting device.

12. The light emitting device package structure as claimed in claim 11, wherein a transmittance of the translucent layer is greater than 50%.

13. The light emitting device package structure as claimed in claim 1, wherein an angle of incidence of the side surface and the bottom surface of the light emitting device is between 95 degrees to 150 degrees.

14. A manufacturing method of a light emitting device package structure, the manufacturing method comprising:

disposing a plurality of light emitting devices ranged interval on a substrate, wherein each light emitting device comprises a first electrode pad and a second electrode pad located on a lower surface and separated from each other, and the first electrode pad and the second electrode pad are disposed on the substrate;

forming a protecting element to encapsulate each light emitting device;

removing a part of the protecting element to expose an upper surface of each light emitting device;

cutting the protecting element by performing a cutting process to form a plurality of light emitting device package structures separated from each other, wherein each light emitting device package structure comprises at least one light emitting device and the protecting element encapsulating a side surface of the light emitting device and exposing the upper surface; and

removing the substrate to expose a bottom surface of the protecting element of each light emitting device package structure, and expose a first bottom surface of the first electrode pad and a second bottom surface of the second electrode pad.

15. The manufacturing method as claimed in claim 14, wherein a reflection rate of the protecting element is at least greater than 90%.

16. The manufacturing method as claimed in claim 14, wherein the upper surface of each light emitting device is aligned with a top surface of the protecting element after removing the part of the protecting element.

17. The manufacturing method as claimed in claim 14, wherein a method of removing the part of the protecting element comprises a grinding method or a polishing method.

18. The manufacturing method as claimed in claim 14, further comprising:

forming an encapsulation adhesive layer on the light emitting devices and the protecting element after removing the part of the protecting element and before performing the cutting process, wherein the encapsulation adhesive layer covers the upper surfaces of the light emitting devices and the top surface of the protecting element.

19. The manufacturing method as claimed in claim 18, wherein at least one wavelength converting material is doped in the encapsulation adhesive layer.

20. The manufacturing method as claimed in claim 19, further comprising:

forming a translucent layer on the light emitting devices and the protecting element, wherein the encapsulation adhesive layer is located between the translucent layer and the light emitting devices, or the translucent layer is located between the light emitting devices and the encapsulation adhesive layer.

21. The manufacturing method as claimed in claim 20, wherein a transmittance of the translucent layer is greater than 50%.

22. The manufacturing method as claimed in claim 14, wherein each light emitting device is a light emitting diode chip with a light emitting wavelength in a range of 315 nanometers to 780 nanometers.

23. A manufacturing method of a light emitting device package structure, the manufacturing method comprising:

disposing a plurality of light emitting devices ranged interval on a substrate, wherein each light emitting device comprises a first electrode pad and a second electrode pad located on a lower surface and separated from each other, and an upper surface of each light emitting device is disposed on the substrate;

forming a protecting element to encapsulate each light emitting device;

removing a part of the protecting element to expose a first bottom surface of the first electrode pad and a second bottom surface of the second electrode pad of each light emitting device;

forming an extension electrode layer to electrically connect to the first electrode pad and the second electrode pad of each light emitting device; and

cutting the protecting element and the extension electrode layer by performing a cutting process to form a plurality of light emitting device package structures separated from each other, wherein each light emitting device package structure comprises at least one light emitting device, the protecting element at least encapsulating the side surface of the light emitting device, a first extension electrode and a second extension electrode, and the first extension electrode and the second extension electrode are separated from each other and cover at least a part of a bottom surface of the protecting element.

24. The manufacturing method as claimed in claim 23, wherein an area of the first extension electrode is greater than an area of the first electrode pad, and an area of the second extension electrode is greater than an area of the second electrode pad.

25. The manufacturing method as claimed in claim 23, wherein an edge of the first extension electrode and an edge of the second extension electrode are aligned with an edge of the protecting element.

26. The manufacturing method as claimed in claim 23, wherein a reflection rate of the protecting element is at least greater than 90%.

27. The manufacturing method as claimed in claim 23, wherein a method of removing the part of the protecting element comprises a grinding method or a polishing method.

28. The manufacturing method as claimed in claim 23, further comprising:

removing the substrate to expose a top surface of the protecting element and the upper surfaces of the light emitting devices after performing the cutting process.

29. The manufacturing method as claimed in claim 23, further comprising:

providing another substrate after forming the extension electrode layer and before performing the cutting process, wherein the extension electrode layer is disposed one the another substrate; and

removing the substrate to expose the top surface of the protecting element and the upper surface of each of the light emitting devices

30. The manufacturing method as claimed in claim 29, further comprising:

forming an encapsulation adhesive layer on the light emitting devices and the protecting element after removing the substrate and before performing the cutting process, wherein the encapsulation adhesive layer covers the upper surface of each of the light emitting devices and the top surface of the protecting element.

31. The manufacturing method as claimed in claim 30, wherein at least one wavelength converting material is doped in the encapsulation adhesive layer.

32. The manufacturing method as claimed in claim 30, further comprising:

forming a translucent layer on the light emitting devices and the protecting element before performing the cutting process.

33. The manufacturing method as claimed in claim 32, wherein a transmittance of the translucent layer is greater than 50%.

34. The manufacturing method as claimed in claim 32, further comprising:

removing the another substrate to expose the first extension electrode and the second extension electrode of each light emitting device package structure after forming the encapsulation adhesive layer and the translucent layer on the light emitting devices and the protecting element.