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Reduction of Barrier Resistance X Area (RA) Product and Protection of Perpendicular Magnetic Anisotropy (PMA) for Magnetic Device Applications

  • US 20150333254A1
  • Filed: 05/15/2014
  • Published: 11/19/2015
  • Est. Priority Date: 05/15/2014
  • Status: Abandoned Application
First Claim
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1. A method of forming a magnetic tunnel junction (MTJ) stack of layers including a tunnel barrier layer between two magnetic layers, comprising:

  • (a) providing a bottom magnetic layer with perpendicular magnetic anisotropy (PMA);

    (b) depositing a first metal layer that forms a bottom magnetic layer/first metal layer interface;

    (c) performing a first passive oxidation process with a maximum oxygen pressure of about 10

    5
    torr, the first passive oxidation process oxidizes an upper portion of the first metal layer while a bottom portion of the first metal layer along the bottom magnetic layer/first metal layer interface remains unoxidized;

    (d) forming one or more metal or metal oxide layers on the oxidized portion of the first metal layer wherein steps (b)-(d) form a tunnel barrier layer; and

    (e) depositing a top magnetic layer on a top surface of the tunnel barrier layer.

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