SILICON MICROSYSTEMS FOR HIGH-THROUGHPUT ANALYSIS OF NEURAL CIRCUIT ACTIVITY, METHOD AND PROCESS FOR MAKING THE SAME

• US 20150335258A1
• Filed: 11/30/2013
• Published: 11/26/2015
• Est. Priority Date: 11/30/2012
• Status: Abandoned Application

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: MASMANIDIS, Sotiris
• Application Number:
  US14/648,244
• Publication Number:
  US 20150335258A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: A61B 2562/125 characterised by the manufacture of electrodes
• CPC Class Codes: A61B 5/24 Detecting, measuring or recording bioelectric or biomagnetic signals of the body or parts thereof
• CPC Class Codes: A61B 5/4064 Evaluating the brain A61B5/031, A61B5/369, A61B5/14553 take precedence
• CPC Class Codes: A61B 5/6868 Brain
• CPC Class Codes: Y10T 29/49119 Brush

Abstract

Provided herein are multi-electrode probe/microsystem designs that readily allow recording with multiple electrodes simultaneously, and of two spatially distinct brain regions at the same time. Also provide are methods and processes for manufacturing the probes.

Claims

1. A process for manufacturing a device comprising a plurality of electrical elements, comprising:

applying a first module in direct contact with a first electrical element layer of a pre-treated substrate, wherein the first electrical element layer is selected from the group consisting of a metal layer, an insulating layer, a semiconductor layer, a layer of photoresist, and a combination thereof, and wherein the first module comprises, on a surface that forms direct contact with the first electrical element layer, a first template design; and

printing a first pattern on the first electrical element layer, wherein the first pattern is formed by a first material having a photo sensitivity.

2. The process of claim 1, wherein the first electrical element layer has a first photo sensitivity that is different from the photo sensitivity of the first material.

3. The process of claim 1, wherein the first material is a photoresist and the first pattern is exposed to ultraviolet radiation.

4. The process of claim 1, further comprising:

creating a first plurality of electrical elements of the device using one or more methods selected from the group consisting of ultraviolet photolithography, etching, deep reactive ion etching, ion milling, grinding, polishing, and combinations thereof.

5. The process of claim 1, further comprising:

creating the first template design on the first module, wherein the first template design corresponding to an arrangement of a first plurality of electrical elements of the device, and wherein at least one electrical element of the first plurality is selected from the group consisting of an electrode, an electrical lead, an insulator, a contact pad, a semiconductor, and a combination thereof.

6. The process of claim 1, further comprising:

depositing a second electrical element layer above the first electrical element layer, wherein the second electrical element layer is selected from the group consisting of a metal layer, an insulating layer, a semiconductor layer, a layer of photoresist, and a combination thereof.

7. The process of claim 6, wherein the second electrical element layer is different from the first electrical element layer.

8. The process of claim 6, further comprising:

applying a second module in direct contact with the second electrical element layer, wherein the second module comprises, on a surface that forms direct contact with the second electrical element layer, a second template design; and

printing a second pattern on the second electrical element layer, wherein the second pattern is formed by a second material having a photo sensitivity.

9. The process of claim 8, wherein the second electrical element layer has a second photo sensitivity that is different from the photo sensitivity of the material forming the second pattern.

10. The process of claim 8, wherein the second material is a photoresist and the second pattern is exposed to ultraviolet radiation.

12. The process of claim 8, further comprising:

creating the second template design on the second module, wherein the second template design corresponding to an arrangement of a second plurality of electrical elements of the device, and wherein at least one electrical element of the second plurality is selected from the group consisting of an electrode, an electrical lead, an insulator, a contact pad, a semiconductor, and a combination thereof.

13. The process of claim 6, further comprising:

depositing a third electrical element layer above the second electrical element layer, wherein the third electrical element layer is selected from the group consisting of a metal layer, an insulating layer, a semiconductor layer, a layer of photoresist, and a combination thereof.

14. The process of claim 13, wherein the third electrical element layer is different from the second electrical element layer.

15. The process of claim 13, further comprising:

applying a third module in direct contact with the third electrical element layer, wherein the third module comprises, on a surface that forms direct contact with the third electrical element layer, a third template design; and

printing a third pattern on the third electrical element layer, wherein the third pattern is formed by a third material having a photo sensitivity.

16. The process of claim 15, wherein the third electrical element layer has a third photo sensitivity that is different from the photo sensitivity of the third material.

17. The process of claim 15, wherein the third material is a photoresist and the third pattern is exposed to ultraviolet radiation.

19. The process of claim 15, further comprising:

creating the third template design on the third module, wherein the third template design corresponding to an arrangement of a third plurality of electrical elements of the device, and wherein at least one electrical element of the third plurality is selected from the group consisting of an electrode, an electrical lead, an insulator, a contact pad, a semiconductor, and a combination thereof.

20. The process of claim 1, wherein the pre-treated substrate further comprises:

a base material selected from the group consisting of silicon, quartz, silicon oxide, sapphire, gallium arsenide, magnesium oxide, zinc oxide, a buried oxide (BOX) layer, and silicon carbide.

25. A device comprising a plurality of electrical elements manufactured according to the process of claim 1.

11. (canceled)

18. (canceled)

21-24. -24. (canceled)

26. (canceled)

27. A neural probe, comprising:

a first implantable shaft;

a first plurality of electrodes disposed on the first implantable shaft;

a second implantable shaft;

a second plurality of electrodes disposed on the second implantable shaft;

a base to which the first implantable shaft and the second implantable shaft are attached and separated by a distance; and

at least one contact pad on the base to which one electrode from the first plurality of electrodes and one electrode from the second plurality of electrodes are connected.

28-36. -36. (canceled)