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Deep Trench Isolation Structure and Method for Improved Product Yield

  • US 20150340267A1
  • Filed: 04/14/2015
  • Published: 11/26/2015
  • Est. Priority Date: 05/21/2014
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising:

  • a deep trench having a filler material therein, said deep trench adjacent to field oxide regions in a semiconductor substrate;

    a high density plasma (HDP) oxide layer, substantially free of thermal oxide, situated over said filler material in said deep trench, wherein said HDP oxide layer has a substantially co-planar top surface with at least one of said field oxide regions, thereby preventing nodules in said deep trench.

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