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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20150340281A1
  • Filed: 05/21/2015
  • Published: 11/26/2015
  • Est. Priority Date: 05/23/2014
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising:

  • forming a first conductive structure on a substrate;

    forming an insulation layer on a sidewall of the first conductive structure;

    forming a second conductive structure a distance apart from the first conductive structure with the insulation layer therebetween;

    first removing a portion of the insulation layer by performing a first dry cleaning operation;

    second removing a reactant product used in the first dry cleaning operation or a first byproduct generated as a result of the first dry cleaning operation by performing a first purge operation; and

    third removing at least a portion or all of the remaining insulation layer by performing a second dry cleaning operation to form an air gap between the first and second conductive structures.

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