METHOD AND STRUCTURES FOR HEAT DISSIPATING INTERPOSERS

• US 20150340310A1
• Filed: 07/31/2015
• Published: 11/26/2015
• Est. Priority Date: 12/19/2012
• Status: Active Grant

• Current Assignee: Adeia Semiconductor Technologies LLC (f/k/a Invensas Corporation) (Adeia Inc.)
• Original Assignee: Adeia Semiconductor Technologies LLC (f/k/a Invensas Corporation) (Adeia Inc.)
• Inventors: Uzoh, Cyprian Emeka, Monadgemi, Pezhman, Caskey, Terrence, Ayatollahi, Fatima Lina, Haba, Belgacem, Woychik, Charles G., Newman, Michael
• Granted Patent: US 9,685,401 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 23/36 Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks H01L23/28, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence; heating H01L23/345
• CPC Class Codes: H01L 23/367 Cooling facilitated by shape of device H01L23/38, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence
• CPC Class Codes: H01L 23/3677 Wire-like or pin-like cooling fins or heat sinks
• CPC Class Codes: H01L 23/3736 Metallic materials H01L23/3732, H01L23/3733, H01L23/3735, H01L23/3737, H01L23/3738 take precedence
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/49838 Geometry or layout
• CPC Class Codes: H01L 23/49866 characterised by the materials materials of the substrates H01L23/14, of the lead-frames H01L23/49579
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An interconnect element includes a semiconductor or insulating material layer that has a first thickness and defines a first surface; a thermally conductive layer; a plurality of conductive elements; and a dielectric coating. The thermally conductive layer includes a second thickness of at least 10 microns and defines a second surface of the interconnect element. The plurality of conductive elements extend from the first surface of the interconnect element to the second surface of the interconnect element. The dielectric coating is between at least a portion of each conductive element and the thermally conductive layer.

Claims

1. An interconnect element, comprising:

a semiconductor or insulating material layer having a first thickness and defining a first surface;

a thermally conductive layer having a second thickness of at least 10 microns and defining a second surface of the interconnect element;

a plurality of conductive elements extending from the first surface of the interconnect element to the second surface of the interconnect element; and

a dielectric coating between at least a portion of each conductive element and the thermally conductive layer.

2. The interconnect element of claim 1, wherein the thermally conductive layer is electrically connected with at least one of the conductive elements such that the conductive element is configured as a ground element.

3. The interconnect element of claim 1, wherein the conductive elements are configured as through-substrate electrodes that define conductive connections between surfaces thereof.

4. The interconnect element of claim 1, further including a barrier layer between at least the surface of the semiconductor or insulating material layer and the thermally conductive layer, and wherein the barrier layer electrically insulates the semiconductor or insulating material layer from the thermally conductive layer.

5. The interconnect element of claim 1, wherein the thermally conductive layer includes copper and wherein the thermally conductive layer has a thickness of between 10 and 300 microns.

6. The interconnect element of claim 1, wherein the thermally conductive layer includes a highly thermally conductive material of one of graphite and carbon, and wherein the thermally conductive layer has a thickness of between 10 and 200 microns.

7. The interconnect element of claim 1, wherein the thermally conductive layer includes a plurality of sections extending in at least one lateral direction along the surface of the semiconductor layer, the interconnect element further including a plurality of spacers between adjacent ones of the sections of the thermally conductive layer.

8. A microelectronic assembly comprising,

an interconnect element including:

a semiconductor or insulating material layer having a first thickness and defining a first surface;

a thermally conductive layer having a second thickness of at least 10 microns and defining a second surface of the interconnect element;

a plurality of conductive elements extending from the first surface of the interconnect element to the second surface of the interconnect element; and

a dielectric coating between at least a portion of each conductive element and the thermally conductive layer; and

a microelectronic element including contact elements at a surface thereof;

wherein the microelectronic element is attached to the interconnect element and wherein the contact elements are electrically connected with the conductive elements.

9. The assembly of claim 8, wherein the interconnect element is attached to the microelectronic package and the contact elements are electrically connected with the conductive elements by joints between the contact elements and the end surfaces of the conductive elements.