LATERAL TRANSISTORS AND METHODS WITH LOW-VOLTAGE-DROP SHUNT TO BODY DIODE
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Abstract
Methods and systems for power semiconductor devices integrating multiple quasi-vertical transistors on a single chip. Multiple power transistors (or active regions) are paralleled, but one transistor has a lower threshold voltage. This reduces the voltage drop when the transistor is forward-biased. In an alternative embodiment, the power device with lower threshold voltage is simply connected as a depletion diode, to thereby shunt the body diodes of the active transistors, without affecting turn-on and ON-state behavior.
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Citations
40 Claims
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1-19. -19. (canceled)
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20. A power semiconductor device, comprising:
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a first and second group of laterally-gated transistors integrated on a single semiconductor die, each said laterally-gated transistor having a first-conductivity-type source region, a gate electrode which is capacitively coupled to a body region to selectably form a lateral channel therein, and a vertically-extended conduction region connecting a drain region to a drain extension region which is adjacent to said lateral channel; wherein the threshold voltages of said first group of laterally-gated transistors are lower than the threshold voltages of said second group of laterally-gated transistors, and said first group of laterally-gated transistors have a higher drive capability than said second group of laterally-gated transistors; and wherein each said gate electrode in said first group of laterally-gated transistors, but not in said second group of laterally-gated transistors, is shorted to a common source electrode. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27)
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28. A power semiconductor device, comprising:
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a first and a second laterally-gated transistor both having a first-conductivity-type source region, and a gate electrode which is capacitively coupled to a body region to selectably form a lateral channel therein, and a first-conductivity-type drain extension region laterally connecting said lateral channel to a vertically-extended conduction region extending from a single common drain region; wherein the threshold voltage of said first laterally-gated transistor is lower than the threshold voltage of said second laterally-gated transistor; wherein both said laterally-gated transistors are connected identically to a common source electrode, a common gate electrode, and a common drain electrode; and wherein the width of the gate electrode of said first laterally-gated transistor is less than the width of the gate electrode of said second laterally-gated transistor. - View Dependent Claims (29, 30, 31, 32, 33, 34)
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35. A power semiconductor device, comprising:
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a first and second group of laterally-gated transistors integrated on a single semiconductor die, each said laterally-gated transistor having a first-conductivity-type source region, and a gate electrode which is capacitively coupled to a body region to selectably form a lateral channel therein, and a vertically-extended conduction region connecting a drain region to a drain extension region which is adjacent to said lateral channel; wherein the threshold voltages of said first group of laterally-gated transistors are lower than the threshold voltages of said second group of laterally-gated transistors; wherein the vertically-extended conduction region of at least each said second laterally-gated transistor is provided by fixed electrostatic charges in the walls of a trenched field plate, which invert a portion of said body region. - View Dependent Claims (36, 37, 38, 39)
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40-49. -49. (canceled)
Specification