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HIGH DENSITY MOSFET ARRAY WITH SELF-ALIGNED CONTACTS DELIMITED BY NITRIDE-CAPPED TRENCH GATE STACKS AND METHOD

  • US 20150340363A1
  • Filed: 08/06/2015
  • Published: 11/26/2015
  • Est. Priority Date: 03/11/2013
  • Status: Active Grant
First Claim
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1. A high density trench-gated MOSFET array comprising:

  • a semiconductor substrate;

    an epitaxial region overlaying the semiconductor substrate, a body region overlying the epitaxial region and a source region overlying the body region;

    an array of active nitride-capped trench gate stacks (ANCTGS), with predetermined inter-ANCTGS separations, disposed above the semiconductor substrate and embedded vertically into the source region, the body region and the epitaxial region wherein each ANCTGS comprises a stack of a polysilicon trench gate embedded in a gate oxide shell and a silicon nitride cap covering a top of the polysilicon trench gate and laterally extending-over edges of the gate oxide shell whereby forming, together with the source region, the body region and the epitaxial region, a MOSFET device of a corresponding MOSFET array in a MOSFET array area; and

    over the MOSFET array area, a patterned dielectric region atop the MOSFET array and a patterned metal layer atop the patterned dielectric region whereby the patterned metal layer forms, with the MOSFET array, a plurality of self-aligned source and body contacts through the inter-ANCTGS separations.

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