Semiconductor Device and Manufacturing Method Thereof
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Abstract
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
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Citations
13 Claims
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1. (canceled)
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2. A method of manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode over a substrate; forming a first insulating film comprising silicon nitride over the gate electrode; forming a second insulating film comprising silicon and oxygen over the first insulating film; forming an oxide semiconductor film over the gate electrode with the first insulating film and the second insulating film interposed therebetween, the oxide semiconductor film including a channel formation region; forming a source electrode and a drain electrode over the oxide semiconductor film, wherein part of the oxide semiconductor film between the source electrode and the drain electrode is etched; and forming a third insulating film over the oxide semiconductor film, the source electrode and the drain electrode, the third insulating film comprising silicon oxide and being in contact with at least a portion of the oxide semiconductor film. - View Dependent Claims (3, 4, 5, 6, 7)
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8. A method of manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode over a substrate; forming a first insulating film comprising silicon oxide over the gate electrode; forming an oxide semiconductor film over the gate electrode with the first insulating film interposed therebetween, the oxide semiconductor film including a channel formation region; forming a source electrode and a drain electrode over the oxide semiconductor film, wherein part of the oxide semiconductor film between the source electrode and the drain electrode is etched; and forming a second insulating film over the oxide semiconductor film, the source electrode and the drain electrode, the second insulating film comprising a first film comprising silicon oxide and a second film on the first film, the second film comprising aluminum oxide or aluminum oxynitride, wherein the first film is in contact with a surface of the oxide semiconductor film. - View Dependent Claims (9, 10, 11, 12, 13)
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Specification