LIGHT EMITTING DIODE STRUCTURE

• US 20150340556A1
• Filed: 08/03/2015
• Published: 11/26/2015
• Est. Priority Date: 07/30/2013
• Status: Active Grant

• Current Assignee: Lextar Electronics Corporation
• Original Assignee: Lextar Electronics Corporation
• Inventors: Chen, Bo-Yu, Tsou, Po-Hung, Chou, Tzu-Hung
• Granted Patent: US 9,444,005 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

A light emitting diode structure is provided. The light emitting diode structure comprises a substrate, a light emitting multi-layer structure, a first current blocking layer, a first current spreading layer, a second current blocking layer and a second current spreading layer. The light emitting multi-layer structure is formed on the substrate by way of stacking. The first current blocking layer is formed on part of the light emitting multi-layer structure. The first current spreading layer covers the first current blocking layer and the light emitting multi-layer structure. The second current blocking layer is formed on part of the first current spreading layer. An orthogonal projection of the second current blocking layer is disposed in an orthogonal projection of the first current blocking layer. The second current spreading layer covers the second current blocking layer and the first current spreading layer.

Claims

1. A light emitting diode structure, comprising:

a substrate;

a light emitting multi-layer structure formed on the substrate by way of stacking;

a first current blocking layer formed on part of the light emitting multi-layer structure;

a first current spreading layer covering the first current blocking layer and the light emitting multi-layer structure; and

a second current blocking layer formed on part of the first current spreading layer, wherein an orthogonal projection of the second current blocking layer is disposed in an orthogonal projection of the first current blocking layer; and

a second current spreading layer covering the second current blocking layer and the first current spreading layer.

2. The light emitting diode structure according to claim 1, wherein an area of the second current blocking layer is smaller than an area of the first current blocking layer.

3. The light emitting diode structure according to claim 2, wherein the lower surface of the first current blocking layer contacting the light emitting multi-layer structure has a width W1, the lower surface of the second current blocking layer contacting the first current spreading layer has a width W2, and 0<

W2 <

W1.

4. The light emitting diode structure according to claim 3, wherein the first current blocking layer and the second current blocking layer both are formed by silicon dioxide (SiO₂), and the first current spreading layer is formed by indium tin oxide (ITO).

5. The light emitting diode structure according to claim 3, wherein the thickness of the first current blocking layer is thicker than the thickness of the second current blocking layer.

6. The light emitting diode structure according to claim 5, wherein the thickness of the first current spreading layer is thicker than the thickness of the second current spreading layer.

7. The light emitting diode structure according to claim 1, wherein the light emitting multi-layer structure comprises a first type semiconductor, a light emitting layer and a second type semiconductor.

8. The light emitting diode structure according to claim 7, further comprising a first electrode formed on the second current spreading layer and located above the orthogonal projection of the second current blocking layer.