INTEGRATED INDUCTION COIL & MICROWAVE ANNTENNA AS AN ALL-PLANAR SOURCE
First Claim
Patent Images
1. A plasma processing device for a substrate, comprising:
- a plasma processing chamber;
a substrate holder, disposed in the plasma processing chamber, that can receive the substrate;
a microwave power supply that can generate microwave energy;
a radio frequency (RF) power supply that can generate RF energy; and
a slot antenna comprising;
a first dielectric component coupled to the microwave power supply and that can transmit the microwave energy;
a second dielectric component disposed between the first dielectric component and the substrate holder; and
a metal layer disposed between the first dielectric component and the second dielectric component and being coupled to the radio frequency power supply.
1 Assignment
0 Petitions
Accused Products
Abstract
This disclosure relates to a plasma processing system that can use a single power source assembly to generate inductively coupled plasma (ICP) and surface wave plasma using the same physical hardware. The power source assembly may include an antenna plate that may include a conductive material be used an ICP coil for a radio frequency (RF) power source and as a slot antenna for a microwave source.
10 Citations
20 Claims
-
1. A plasma processing device for a substrate, comprising:
-
a plasma processing chamber; a substrate holder, disposed in the plasma processing chamber, that can receive the substrate; a microwave power supply that can generate microwave energy; a radio frequency (RF) power supply that can generate RF energy; and
a slot antenna comprising;a first dielectric component coupled to the microwave power supply and that can transmit the microwave energy; a second dielectric component disposed between the first dielectric component and the substrate holder; and a metal layer disposed between the first dielectric component and the second dielectric component and being coupled to the radio frequency power supply. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. An antenna for generating plasma for treating a semiconductor substrate, comprising:
-
a first dielectric component that can be coupled to a microwave power supply and that can transmit microwave energy to generate the plasma for treating the semiconductor substrate; a second dielectric component opposite from the first dielectric component; and a metal layer on a surface of the first dielectric component or the second dielectric component, the metal layer that can be coupled to a radio frequency power supply.
-
-
13. A method for a substrate, comprising:
-
receiving the substrate on a substrate holder in a plasma processing chamber; applying microwave power to a transmission assembly for the plasma processing chamber, the transmission assembly being opposite the substrate holder and comprising; a microwave waveguide; and a dielectric component opposite the microwave guide; and applying radio frequency (RF) power to a metal electrode disposed between the dielectric component and the microwave waveguide, the metal electrode being coupled to a RF power source and electrical ground and comprising an opening used to transmit the microwave power towards the substrate holder. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
-
Specification