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SEMICONDUCTOR DEVICE WITH VOIDS WITHIN SILICON-ON-INSULATOR (SOI) STRUCTURE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

  • US 20150348825A1
  • Filed: 02/03/2015
  • Published: 12/03/2015
  • Est. Priority Date: 05/30/2014
  • Status: Active Grant
First Claim
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1. A semiconductor device with voids within a silicon-on-insulator (SOI) structure comprising:

  • a semiconductor substrate;

    an insulating layer disposed on the substrate;

    a silicon-on-insulator (SOI) layer disposed on the insulating layer;

    a device isolation layer and an active area disposed within the SOI layer;

    one or more voids disposed within the insulating layer; and

    a sealing insulating sealing an opening of the void.

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