SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device, comprising:
- a first semiconductor layer of a first conductivity type;
a second semiconductor layer of a second conductivity type on the first semiconductor layer;
a third semiconductor layer of the first conductivity type on the second semiconductor layer, the second semiconductor layer being between the first and third semiconductor layers in a first direction;
a first plurality of source elements each extending along the first direction from the third semiconductor layer into the second semiconductor layer and spaced from each other along a second direction perpendicular to the first direction;
a first gate electrode extending along the first direction from the third semiconductor layer into the second semiconductor layer and spaced from the first plurality of source elements in a third direction perpendicular to the first and second directions, the first gate electrode extending continuously along the second direction parallel to the first plurality of source elements;
a source electrode electrically connected to first plurality of source elements; and
a drain electrode on the first semiconductor layer such that the first semiconductor layer is between the second semiconductor layer and the drain electrode in the first direction.
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Accused Products
Abstract
According to one embodiment, a semiconductor device, includes a first semiconductor layer of a first conductivity, a second semiconductor layer of a second conductivity type, and a third semiconductor layer of the first conductivity. A first plurality of source elements are spaced from each other and a first gate electrode extends continuously between the source elements. A source electrode is electrically connected to the source elements, and a drain electrode is on the first semiconductor layer such that the first semiconductor layer is between the second semiconductor layer and the drain electrode. By employing this structure, an inactive region decreases, and an active area ratio increases. Thereby, a breakdown voltage can be maintained while an on-resistance can be reduced.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type on the first semiconductor layer; a third semiconductor layer of the first conductivity type on the second semiconductor layer, the second semiconductor layer being between the first and third semiconductor layers in a first direction; a first plurality of source elements each extending along the first direction from the third semiconductor layer into the second semiconductor layer and spaced from each other along a second direction perpendicular to the first direction; a first gate electrode extending along the first direction from the third semiconductor layer into the second semiconductor layer and spaced from the first plurality of source elements in a third direction perpendicular to the first and second directions, the first gate electrode extending continuously along the second direction parallel to the first plurality of source elements; a source electrode electrically connected to first plurality of source elements; and a drain electrode on the first semiconductor layer such that the first semiconductor layer is between the second semiconductor layer and the drain electrode in the first direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A semiconductor device, comprising:
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a semiconductor substrate of a first conductivity type; a first semiconductor layer of the first conductivity type on the semiconductor substrate; a second semiconductor layer of a second conductivity type on the first semiconductor layer; a third semiconductor layer of the first conductivity type on the second semiconductor layer; a first trench penetrating the second and third semiconductor layers in a perpendicular direction to a surface of the semiconductor substrate; a second trench penetrating the second and third semiconductor layers in the perpendicular direction to the surface of the semiconductor substrate, the second trench being separated from the first trench; a third trench penetrating the second and third semiconductor layers in the perpendicular direction to the surface of the substrate, the third trench being separated from the second trench; a first groove penetrating the second and third semiconductor layers in the perpendicular direction to the surface of the substrate, the first groove being provided in parallel with a direction connecting the first, second and third trenches in a plan view; a first, second, and third insulating film formed in the first, second and third trenches, respectively; a first, second and third conductive section formed in the first, second, and third trenches, and inside the first, second and third insulating films, respectively; a source electrode electrically connected to the first, second, and third conductive sections, and on the third semiconductor layer; a fourth insulating film formed in the first groove; a gate electrode in the fourth insulating film; and a drain electrode provided on a back surface side of the substrate. - View Dependent Claims (16)
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17. A semiconductor device, comprising:
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a plurality of source elements arranged in a dotted pattern such that the source elements are separated from each other in a first plane of a first semiconductor layer of a first conductivity type, the source elements penetrating, in a first direction orthogonal to the first plane, a second semiconductor layer of a second conductivity type disposed on the first semiconductor and a third semiconductor layer of the first conductivity type disposed on the second semiconductor layer; an insulating film adjacent to each source element and between each source element and the first, second, and third semiconductor layers; a gate electrode in a plurality of grooves formed in an striped pattern spaced from each other in a second direction parallel to the first plane and extending along a third direction that is parallel to the first plane and perpendicular to the second direction, the grooves penetrating the second and third semiconductor layers in the first direction; and a gate insulating film between the gate electrode and the first, second, and third semiconductor layers, wherein the source elements are between the plurality of grooves. - View Dependent Claims (18, 19, 20)
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Specification