HIGH BRIGHTNESS LIGHT EMITTING DIODE STRUCTURE AND THE MANUFACTURING METHOD THEREOF
First Claim
1. A light-emitting diode structure, comprising:
- a first semiconductor layer;
a second semiconductor layer under the first semiconductor layer;
a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light;
a first electrical pad on the first semiconductor layer;
a first extension connecting to the first electrical pad; and
a first reflective layer covering the first extension and exposing the first electrical pad,wherein the reflectivity of the first reflective layer is higher than that of the first extension.
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Abstract
A light-emitting diode structure comprises a first semiconductor layer; a second semiconductor layer under the first semiconductor layer; a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light; a first electrical pad on the first semiconductor layer for wire bonding; a first extension connecting to the first electrical pad; and a first reflective layer covering the first extension and exposing the first electrical pad, wherein the first electrical pad and the first extension have the same thickness, and the reflectivity of the first reflective layer is higher than that of the first extension.
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Citations
20 Claims
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1. A light-emitting diode structure, comprising:
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a first semiconductor layer; a second semiconductor layer under the first semiconductor layer; a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light; a first electrical pad on the first semiconductor layer; a first extension connecting to the first electrical pad; and a first reflective layer covering the first extension and exposing the first electrical pad, wherein the reflectivity of the first reflective layer is higher than that of the first extension. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A light-emitting diode structure, comprising:
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a first semiconductor layer; a second semiconductor layer under the first semiconductor layer; a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light; a first electrical pad on the first semiconductor layer; and a first reflective layer covering the first extension and exposing the first electrical pad; wherein the reflectivity of the first reflective layer is higher than that of the first electrical pad. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification