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REPLACEMENT METAL GATE INCLUDING DIELECTRIC GATE MATERIAL

  • US 20150357434A1
  • Filed: 08/17/2015
  • Published: 12/10/2015
  • Est. Priority Date: 01/30/2014
  • Status: Active Grant
First Claim
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1. A method of fabricating a semiconductor device, the method comprising:

  • forming at least one semiconductor fin on a semiconductor substrate;

    forming an etch stop layer on an upper surface of the at least one semiconductor fin;

    forming a plurality of dummy gate elements on the etch stop layer, each dummy gate element formed from a dielectric material and having a hardmask gate cap formed on an upper surface of the semiconductor fin;

    depositing a high-dielectric constant layer that conforms to an outer surface of each dummy gate element and depositing a spacer layer on the high-dielectric constant layer;

    performing a first etching process that etches the spacer layer to form a spacer on each sidewall of dummy gate elements and exposes an upper portion of the high-dielectric constant layer;

    performing a second etching process different from the first etching process that selectively etches the upper portion of the high-dielectric constant layer to expose each hardmask gate cap;

    removing the hardmask gate caps and the dummy gate elements to form a trench between a respective pair of spacers; and

    performing a third etching process after removing the dummy gates elements to remove a portion of the high-dielectric constant material from the sidewalls of the spacers such that a remaining portion of the high-dielectric constant material is interposed between the spacers and the etch stop layer.

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