GRAPHENE TRANSISTOR OPTICAL DETECTOR BASED ON METAMATERIAL STRUCTURE AND APPLICATION THEREOF

• US 20150357504A1
• Filed: 10/28/2013
• Published: 12/10/2015
• Est. Priority Date: 01/30/2013
• Status: Active Grant

• Current Assignee: Suzhou Institute of Nano-Tech and Nano-Bionics
• Original Assignee: Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences
• Inventors: CHEN, Qin, SONG, Shichao
• Granted Patent: US 9,444,002 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/146 Imager structures
• CPC Class Codes: H01L 29/0847 of field-effect transistors with insulated gate H01L29/0653 takes precedence; with a passive supplementary region between source or drain and substrate related to punch-through, capacity or isolation phenomena H01L29/1079; with LDD or DDD structure H01L29/7833; for thin film transistors H01L29/78618
• CPC Class Codes: H01L 29/1606 Graphene
• CPC Class Codes: H01L 29/42372 characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out H01L29/42324 takes precedence
• CPC Class Codes: H01L 31/02162 for filtering or shielding light, e.g. multicolour filters for photodetectors
• CPC Class Codes: H01L 31/028 including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/1136 the device being a metal-insulator-semiconductor field-effect transistor
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells

Abstract

A graphene transistor optical detector based on a metamaterial structure and an application thereof. The optical detector includes a substrate, a gate metal layer, a gate medium layer, a graphene layer, a source and drain metal layer successively arranged from bottom to top, wherein a local region of at least the source and drain metal layer has a periodic micro/nanostructure, the periodic micro/nanostructure being matched with the gate metal layer and the gate medium layer to form a metamaterial structure having a complete absorption characteristic. By changing the refractive index, thickness or the like of material for the periodic micro/nanostructure and the gate medium layer, a light absorption frequency band of the metamaterial structure can be regulated. The optical detector provided by the present invention has higher flexibility and narrow-band response, and can work under visible light to infrared even longer wavebands by selecting different metamaterial structures.

Claims

1. A graphene transistor optical detector based on a metamaterial structure, comprising a substrate, a gate metal layer, a gate medium layer, a graphene layer and a source and drain metal layer successively arranged from bottom to top,

wherein a local area of at least the source and drain metal layer has a periodic micro/nanostructure, the periodic micro/nanostructure being matched with the gate metal layer and the gate medium layer to form a metamaterial structure having an approximately complete absorption characteristic.

2. The graphene transistor optical detector based on a metamaterial structure according to claim 1, characterized in that the impedance Z of the metamaterial structure is equal to or approximate to a vacuum impedance of 376.7Ω

, wherein Z=(μ

/∈

)^1/2, where ∈ and

μ

denotes a dielectric constant and a magnetic permeability of the metamaterial structure, respectively.

3. The graphene transistor optical detector based on a metamaterial structure according to claim 1, characterized in that a lower end face of the source and drain metal layer comes into contact with the graphene layer to form a conductive channel for connecting a source and a drain of the transistor.

4. The graphene transistor optical detector based on a metamaterial structure according to claim 1, characterized in that the source and drain metal layer comprises a source and a drain, wherein local regions of at least the source and the drain are staggered to form a periodic micro/nanostructure.

5. The graphene transistor optical detector based on a metamaterial structure according to claim 4, characterized in that the thickness of the source and drain metal layer is 20-200 nm.

6. The graphene transistor optical detector based on a metamaterial structure according to claim 1, characterized in that the thickness of the gate metal layer is above 50 nm.

7. The graphene transistor optical detector based on a metamaterial structure according to claim 1, characterized in that the gate medium layer is made of low-light-absorption dielectric material including silicon oxide, silicon nitride or aluminum oxide.

8. The graphene transistor optical detector based on a metamaterial structure according to claim 1, characterized in that the graphene layer is at least selected from single-layer graphene, multi-layer (less than or equal to 10 layers) graphene or a graphene micro/nanostructure layer.

9. An application of the graphene transistor optical detector based on a metamaterial structure according to claim 1 in a spectrum detecting and analyzing device or an image sensing device.

10. An image sensing device or a spectrum detecting and analyzing device, comprising a plurality of the graphene transistor optical detectors based on a metamaterial structure according to claim 1, which are distributed in an array.