METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE

• US 20150357793A1
• Filed: 06/05/2015
• Published: 12/10/2015
• Est. Priority Date: 06/10/2014
• Status: Active Grant

• Current Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Original Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Inventors: MORI, Hiroki, TANAHASHI, Toshiyuki
• Granted Patent: US 9,373,939 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01S 2304/04 MOCVD or MOVPE
• CPC Class Codes: H01S 5/2201 in a specific crystallographic orientation
• CPC Class Codes: H01S 5/2224 semi-insulating semiconductors
• CPC Class Codes: H01S 5/223 Buried stripe structure H01S5/227 takes precedence
• CPC Class Codes: H01S 5/227 Buried mesa structure ; Striped active layer
• CPC Class Codes: H01S 5/2272 grown by a mask induced selective growth
• CPC Class Codes: H01S 5/2275 mesa created by etching
• CPC Class Codes: H01S 5/3202 grown on specifically orientated substrates, or using orientation dependent growth
• CPC Class Codes: H01S 5/3235 emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
• CPC Class Codes: H01S 5/3401 having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers

Abstract

A method for manufacturing a semiconductor device comprising the steps of: growing a stacked semiconductor layer on a substrate, the stacked semiconductor layer including an active layer and a cladding layer; forming a mesa structure by etching the stacked semiconductor layer, the mesa structure extending in a [011] direction; and forming a buried layer of Fe-doped InP on the side surface of the mesa structure in a reactor of an organo-metallic vapor phase epitaxy apparatus while supplying a hydrogen chloride gas into the reactor. In the step of forming the buried layer, the hydrogen chloride gas is supplied from the beginning of forming the buried layer. The buried layer has a first region and a second region. The first region has a front surface of a (311)B plane. The second region is formed on the front surface. The Fe concentration of the first region is higher than that of the second region.

Claims

1. A method for manufacturing a semiconductor device comprising the steps of:

growing a stacked semiconductor layer on a principal surface of a substrate, the stacked semiconductor layer including an active layer and a cladding layer;

forming a mesa structure by etching the stacked semiconductor layer using a dry etching method, the mesa structure extending in a [011] direction; and

forming a buried layer on the side surface of the mesa structure and the principal surface of the substrate in a reactor of an organo-metallic vapor phase epitaxy apparatus while supplying a hydrogen chloride gas into the reactor, the buried layer being composed of an Fe-doped InP,

wherein, in the step of forming the buried layer, the hydrogen chloride gas is supplied from the beginning of forming the buried layer,

the buried layer has a first region and a second region,

the first region is formed on a side surface of the active layer, the first region having a front surface of a (311)B plane,

the second region is formed on the from surface of the first region, and

the first region has a higher Fe concentration than that of the second region.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the buried layer is formed at a temperature of lower than 620°

C.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the buried layer is formed at a temperature between 550°

C. and 600°

C.

4. The method for manufacturing a semiconductor device according to claim 1, wherein the hydrogen chloride gas is supplied at a concentration more than 11 ppm.

5. The method for manufacturing a semiconductor device according to claim 1, further comprising the steps of:

growing a test buried layer on the mesa structure by changing a growth condition of a flow rate of the hydrogen chloride gas;

observing a growth rate of the test buried layer in a direction perpendicular to the side surface of the mesa structure; and

obtaining a correlation between the growth rate and the flow rate of the hydrogen chloride gas,

wherein the steps of forming the test buried layer and observing the growth rate of the test buried layer are performed in advance with the step of forming the buried layer, and

the buried layer is grown at a condition determined based on the correlation between the growth rate and the flow rate of the hydrogen chloride gas.

6. A semiconductor device, comprising:

a substrate;

a waveguide mesa disposed on the substrate, the waveguide mesa including an active layer and a cladding layer stacked in that order on the substrate, the waveguide mesa extending in a [011] direction; and

a buried layer disposed on a side surface of the waveguide mesa, the buried layer being composed of Fe-doped InP,

wherein the buried layer includes a first region and a second region,

the first region having a front surface of a (311)B plane, the first region being in contact with a side surface of the active layer,

the second region is disposed on the first region, and

the first region has a higher concentration of Fe than that of the second region.

7. The semiconductor device according to claim 6, wherein the first region has a 10% or more higher concentration of Fe than that of the second region.

8. The semiconductor device according to claim 6, wherein the substrate is composed of n-type InP,

the cladding layer is composed of n-type InP, and

the active layer is composed of GaInAs/AlInAs multi-layer structure.

9. The semiconductor device according to claim 6, wherein the waveguide mesa has a height of larger than 5 μ

m, and

the active layer has a thickness of larger than 1 μ

m.