Wafer Scale Monolithic CMOS-Integration of Free- and non-Free-Standing Metal- and Metal alloy-based MEMS Structures in a Sealed Cavity
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Accused Products
Abstract
An assembly of metallic MEMS structures directly fabricated on planarized CMOS substrates, containing the application-specific integrated circuit (ASIC), by direct deposition and subsequent microfabrication steps on the ASIC interconnect layers, with integrated capping for packaging, is provided. The MEMS structures comprise at least one MEMS device element, with or without moveable parts anchored on the CMOS ASIC wafer with electrical contact provided via the metallic interconnects of the ASIC. The MEMS structures can also be made of metallic alloys, conductive oxides and amorphous semiconductors. The integrated capping, which provides a sealed cavity, is accomplished through bonding pads defined in the post-processing of the CMOS substrate.
34 Citations
64 Claims
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1-32. -32. (canceled)
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33. A device, comprising:
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a complementary-metal-oxide-semiconductor (CMOS) substrate hosting an application-specific integrated circuit (ASIC), wherein the CMOS substrate includes interconnect layers; microelectromechanical (MEMS) structures directly fabricated on the interconnect layers; and a cap positioned on the CMOS substrate containing at least one cavity in which at least one MEMS structure is enclosed. - View Dependent Claims (34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52)
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53. A method of fabricating a device, comprising:
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forming microelectromechanical (MEMS) structures on a complementary-metal-oxide-semiconductor (CMOS) substrate hosting an application-specific integrated circuit (ASIC); and positioning a cap over the MEMS structures. - View Dependent Claims (54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64)
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Specification