CRYSTAL OF NITRIDE OF GROUP-13 METAL ON PERIODIC TABLE, AND METHOD FOR PRODUCING THE SAME

• US 20150361587A1
• Filed: 08/21/2015
• Published: 12/17/2015
• Est. Priority Date: 02/22/2013
• Status: Active Grant

• Current Assignee: Mitsubishi Chemical Corporation (Mitsubishi Chemical Group Corp.)
• Original Assignee: Mitsubishi Chemical Corporation (Mitsubishi Chemical Group Corp.)
• Inventors: KOJIMA, Atsuhiko, MIKAWA, Yutaka, NAMITA, Hideo, IKEDA, Hirotaka, KAMADA, Kazunori, FUJISAWA, Hideo
• Granted Patent: US 9,890,474 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: C30B 7/105 using ammonia as solvent, i.e. ammonothermal processes

Abstract

An object of the present invention is to provide a crystal of a nitride of a Group-13 metal on the Periodic Table which has good crystallinity and has no crystal strain, and to provide a production method for the crystal. The crystal of a nitride of a Group-13 metal on the Periodic Table of the present invention, comprises oxygen atom and hydrogen atom in the crystal and has a ratio of a hydrogen concentration to an oxygen concentration therein of from 0.5 to 4.5.

Claims

1. A crystal of a nitride of a Group-13 metal on the Periodic Table, comprising oxygen atom and hydrogen atom in the crystal and having a ratio of a hydrogen concentration to an oxygen concentration therein of from 0.5 to 4.5.

2. The crystal of a nitride of a Group-13 metal on the Periodic Table according to claim 1, wherein the hydrogen concentration is from 1.0×

10¹⁷ to 1.0×

10²⁰ atoms/cm³.

3. The crystal of a nitride of a Group-13 metal on the Periodic Table according to claim 1, wherein the oxygen concentration is from 1.0×

10¹⁷ to 5.0×

10¹⁹ atoms/cm³.

4. The crystal of a nitride of a Group-13 metal on the Periodic Table according to claim 1, wherein a S-parameter as measured according to a positron annihilation spectroscopy is 0.448 or more.

5. The crystal of a nitride of a Group-13 metal on the Periodic Table according to claim 4, wherein a positron diffusion length is from 15 to 50 nm.

6. The crystal of a nitride of a Group-13 metal on the Periodic Table according to claim 1, wherein a dislocation density (DSD) is 5×

10⁵ cm<sup>−

2</sup> or less, and a stacking fault density (SFD) is 8×

10 cm<sup>−

1</sup> or less.

7. A substrate of a nitride of a Group-13 metal on the Periodic Table, which is formed of the crystal of a nitride of a Group-13 metal on the Periodic Table according to claim 1.