SEMICONDUCTOR DEVICE
1 Assignment
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Accused Products
Abstract
A first transistor including a channel formation region, a first gate insulating layer, a first gate electrode, and a first source electrode and a first drain electrode; a second transistor including an oxide semiconductor layer, a second source electrode and a second drain electrode, a second gate insulating layer, and a second gate electrode; and a capacitor including one of the second source electrode and the second drain electrode, the second gate insulating layer, and an electrode provided to overlap with one of the second source electrode and the second drain electrode over the second gate insulating layer are provided. The first gate electrode and one of the second source electrode and the second drain electrode are electrically connected to each other.
39 Citations
19 Claims
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1. (canceled)
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2. A semiconductor device comprising:
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a first transistor; a second transistor; and a capacitor, wherein one of a source and a drain of the first transistor is electrically connected to a first wiring, wherein the other of the source and the drain of the first transistor is electrically connected to a second wiring, wherein a gate of the first transistor is electrically connected to one of a source and a drain of the second transistor, wherein the gate of the first transistor is electrically connected to one of electrodes of the capacitor, wherein the other of the source and the drain of the second transistor is electrically connected to a third wiring, wherein a first gate of the second transistor is electrically connected to a fourth wiring, wherein the other of the electrodes of the capacitor is electrically connected to a fifth wiring, wherein a second gate of the second transistor is electrically connected to a sixth wiring, and wherein the second transistor comprises an oxide semiconductor layer comprising a channel formation region. - View Dependent Claims (3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a first transistor; a second transistor; and a capacitor, wherein one of a source and a drain of the first transistor is electrically connected to a first wiring, wherein the other of the source and the drain of the first transistor is electrically connected to a second wiring, wherein a gate of the first transistor is electrically connected to one of a source and a drain of the second transistor, wherein the gate of the first transistor is electrically connected to one of electrodes of the capacitor, wherein the other of the source and the drain of the second transistor is electrically connected to a third wiring, wherein a first gate of the second transistor is electrically connected to a fourth wiring, wherein the other of the electrodes of the capacitor is electrically connected to a fifth wiring, wherein a second gate of the second transistor is electrically connected to a sixth wiring, wherein the second transistor comprises an oxide semiconductor layer comprising a channel formation region, and wherein the fourth wiring and the sixth wiring are configured to be supplied with a same potential. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a first transistor; a second transistor; and a capacitor, wherein one of a source and a drain of the first transistor is electrically connected to a first wiring, wherein the other of the source and the drain of the first transistor is electrically connected to a second wiring, wherein a gate of the first transistor is electrically connected to one of a source and a drain of the second transistor, wherein the gate of the first transistor is electrically connected to one of electrodes of the capacitor, wherein the other of the source and the drain of the second transistor is electrically connected to a third wiring, wherein a first gate of the second transistor is electrically connected to a fourth wiring, wherein the other of the electrodes of the capacitor is electrically connected to a fifth wiring, wherein a second gate of the second transistor is electrically connected to a sixth wiring, wherein the second transistor comprises an oxide semiconductor layer comprising a channel formation region, and wherein the fourth wiring and the sixth wiring are configured to be supplied with different potentials from each other. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification