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SEMICONDUCTOR DEVICE AND METHOD OF FORMING VERTICAL STRUCTURE

  • US 20150364560A1
  • Filed: 06/13/2014
  • Published: 12/17/2015
  • Est. Priority Date: 06/13/2014
  • Status: Active Grant
First Claim
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1. A method of forming a vertical structure, comprising:

  • providing a substrate;

    providing the vertical structure having a drain over the substrate;

    forming a metal layer over a top and at least a portion of a sidewall of the drain of the vertical structure; and

    annealing the metal layer to form silicide over the top and the sidewall of the drain of the vertical structure.

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