INTEGRATED OPTICAL SENSOR AND METHODS FOR MANUFACTURING AND USING THE SAME

• US 20150371074A1
• Filed: 09/23/2014
• Published: 12/24/2015
• Est. Priority Date: 06/23/2014
• Status: Active Grant

• Current Assignee: Shanghai OXi Technology Co., Ltd.
• Original Assignee: Shanghai OXi Technology Co., Ltd.
• Inventors: Lin, Weiping
• Granted Patent: US 9,711,493 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G06V 40/1318 using electro-optical elements or layers, e.g. electroluminescent sensing
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 27/14679 Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An integrated optical sensor and methods for forming and using the same is provided. The integrated optical sensor comprising: a light source; a transparent substrate, having a first surface and a second surface opposite to each other; a first pixel cell array region, located on the first surface and adapted to receiving lights emitted from the light source and reflected by an external object; a second pixel cell array region, located on the first surface and adapted to receiving lights emitted from the light source and reflected by the fingerprint; and a third pixel cell array region, located on the first surface and adapted to receiving visible lights from outside. The integrated optical sensor has simplified structures, the forming method thereof has improved processes, and the using method thereof has more applications. Besides, production costs may be reduced.

Claims

1. An integrated optical sensor, comprising:

a light source;

a transparent substrate, having a first surface and a second surface opposite to each other;

a first pixel cell array region, located on the first surface and adapted to receiving lights emitted from the light source and reflected by an external object;

a second pixel cell array region, located on the first surface and adapted to receiving lights emitted from the light source and reflected by a fingerprint; and

a third pixel cell array region, located on the first surface and adapted to receiving visible lights from outside.

2. The integrated optical sensor according to claim 1, further comprising:

an encapsulation substrate which is located on and covering the first pixel cell array region, the second pixel cell array region and third pixel cell array region.

3. The integrated optical sensor according to claim 2, further comprising:

a cover plate above the transparent substrate and facing the first surface.

4. The integrated optical sensor according to claim 3, wherein the light source is below the transparent substrate and facing the second surface.

5. The integrated optical sensor according to claim 4, wherein

the first pixel cell array region comprises an array of first pixel cells, wherein each first pixel cell comprises a first transparent region, a first light barrier region and a first photodiode, and the first photodiode is located above the first light barrier region;

the second pixel cell array region comprises an array of second pixel cells, wherein each second pixel cell comprises a second transparent region, a second light barrier region and a second photodiode, and the second photodiode is located above the second light barrier region; and

the third pixel cell array region comprises an array of third pixel cells, wherein each third pixel cell comprises a third light barrier region and a third photodiode, and the third photodiode is located above the third light barrier region.

6. The integrated optical sensor according to claim 5, wherein the first light barrier region has a first barrier layer located on the transparent substrate, the second light barrier region has a second barrier layer located on the transparent substrate, and the third light barrier region has a third barrier layer located on the transparent substrate.

7. The integrated optical sensor according to claim 5, wherein each of the first pixel cells, the second pixel cells and the third pixel cells comprises one or more thin film transistors which are amorphous silicon thin film transistors.

8. The integrated optical sensor according to claim 5, wherein the second pixel cells are coupled to a control chip through a gate driving circuit.

9. The integrated optical sensor according to claim 8, wherein the gate driving circuit is located on the transparent substrate or an external circuit chip.

10. The integrated optical sensor according to claim 5, wherein the first pixel cells, the second pixel cells and the third pixel cells are coupled to a system chip through a data reading circuit.

11. The integrated optical sensor according to claim 1, wherein the light source comprises at least one selected from an infrared light source and a visible light source.

12. The integrated optical sensor according to claim 1, wherein the second pixel cell array region is disposed between the first pixel cell array region and the third pixel cell array region.

13. A method for using the integrated optical sensor according to claim 1, comprising:

using the third pixel cell array region to receive visible lights from outside, so as to obtain ambient light information;

using the second pixel cell array region to receive lights emitted from the light source and reflected by a fingerprint, so as to obtain fingerprint image information; and

implementing a background interference elimination to the fingerprint image information based on the obtained ambient light information.

14. The method according to claim 13, further comprising:

using the first pixel cell array region to receive lights emitted from the light source and reflected by a finger, so as to obtain distance information of the finger; and

determining whether the finger is contacted with a cover plate of the integrated optical sensor based on the obtained distance information of the finger.

15. A method for manufacturing an integrated optical sensor, comprising:

providing a transparent substrate and a light source, wherein the transparent substrate has a first surface and a second surface opposite to each other;

forming a first pixel cell array region on the first surface, for receiving lights emitted from the light source and reflected by an external object;

forming a second pixel cell array region on the first surface, for receiving lights emitted from the light source and reflected by a fingerprint; and

forming a third pixel cell array region on the first surface, for receiving visible lights from outside.

16. The method according to claim 15, further comprising:

forming an encapsulation substrate on the first pixel cell array region, the second pixel cell array region and third pixel cell array region, for covering the first pixel cell array region, the second pixel cell array region and third pixel cell array region.

17. The method according to claim 16, further comprising:

providing a cover plate; and

after the first pixel cell array region, the second pixel cell array region and the third pixel cell array region are formed, disposing the cover plate at a position above the transparent substrate and facing the first surface.

18. The method according to claim 17, further comprising:

after the first pixel cell array region, the second pixel cell array region and the third pixel cell array region are formed, disposing the light source at a position below the transparent substrate and facing the second surface.

19. The method according to claim 18, wherein forming the first pixel cell array region, the second pixel cell array region and the third pixel cell array region on the first surface further respectively comprising:

forming an array of first pixel cells on the first surface, each of the first pixel cell comprises a first transparent region, a first light barrier region and a first photodiode located on the first light barrier region;

forming an array of second pixel cells on the first surface, each of the second pixel cells comprises a second transparent region, a second light barrier region and a second photodiode located on the second light barrier region; and

forming an array of third pixel cells on the first surface, and each of the pixel cells comprises a third light barrier region and a third photodiode located on the third light barrier region.

20. The method according to claim 19, wherein the first light barrier region is formed by forming a first barrier layer on the transparent substrate, the second light barrier region is formed by forming a second barrier layer on the transparent substrate, and the third light barrier region is formed by forming a third barrier layer on the transparent substrate.

21. The method according to claim 18, wherein each of the first pixel cells, the second pixel cells and the third pixel cells comprises one or more thin film transistors which are amorphous silicon thin film transistors.

22. The method according to claim 18, further comprising:

forming a gate driving circuit when forming the second pixel cells for coupling the second pixel cells to a control chip.

23. The method according to claim 22, wherein the gate driving circuit is formed on the transparent substrate or on an external circuit chip.

24. The method according to claim 18, further comprising:

forming a data reading circuit when forming the first pixel cells, the second pixel cells and the third pixel cells for coupling charge signals or voltage signals of the first pixel cells, the second pixel cells and the third pixel cells to a system chip.

25. The method according to claim 15, wherein the light source comprises at least one selected from an infrared light source and a visible light source.

26. The method according to claim 15, wherein the second pixel cell array region is formed between the first pixel cell array region and the third pixel cell array region.