NESTED HELICAL INDUCTOR

• US 20150371764A1
• Filed: 06/20/2014
• Published: 12/24/2015
• Est. Priority Date: 06/20/2014
• Status: Abandoned Application

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Gordin, Rachel, NI, WAN, Shapiro, Michael J., Van Duyne, William F.
• Application Number:
  US14/310,748
• Publication Number:
  US 20150371764A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01F 17/0013 with stacked layers
• CPC Class Codes: H01F 2017/002 Details of via holes for interconnecting the layers
• CPC Class Codes: H01F 2017/004 with the coil helically wound around an axis without a core
• CPC Class Codes: H01F 41/041 Printed circuit coils apparatus or processes for manufacturing printed circuits in general H05K3/00
• CPC Class Codes: Y10T 29/49073 by assembling coil and core

Abstract

Some examples describe a first helical structure of an electromagnetic inductor coil. In some examples, at least a portion of the first helical structure of the electromagnetic inductor coil is inside a first substrate. Further, some examples describe a second helical structure of the electromagnetic inductor coil. In some instances, at least a portion of the second helical structure is nested within the first helical structure of the electromagnetic inductor coil. Further, in some examples, the at least the portion of the second helical structure is inside the first substrate.

Claims

1. An apparatus comprising:

a first helical structure of an electromagnetic inductor coil, wherein at least a first portion of the first helical structure of the electromagnetic inductor coil is inside a first substrate; and

a second helical structure of the electromagnetic inductor coil, wherein at least a first portion of the second helical structure is nested within the first helical structure of the electromagnetic inductor coil, and wherein the at least the first portion of the second helical structure is inside the first substrate.

2. The apparatus of claim 1 further comprising:

a transitional structure of the electromagnetic inductor coil that connects the first helical structure of the electromagnetic inductor coil and the second helical structure of the electromagnetic inductor coil, wherein the transitional structure transitions a first set of helical windings of the first helical structure into a second set of helical windings of the second helical structure smaller than the first set of helical windings of the first helical structure, wherein the second set of helical windings fit within a space inside the first helical structure.

3. The apparatus of claim 2, wherein the first set of helical windings wind a given distance in a first direction until connecting to the transitional structure , wherein the transitional structure turns the electromagnetic inductor coil around to face a second direction opposite to the first direction, wherein the second set of helical windings initiate at the transitional structure and wind, within the space inside the first helical structure, for the given distance in the second direction.

4. The apparatus of claim 2 wherein a number of the first set of helical windings is equivalent to a number of the second set of helical windings.

5. The apparatus of claim 1, wherein the first helical structure has a first cuboid, double-helix frame , wherein the second helical structure has a second cuboid double-helix frame, and wherein the second cuboid, double-helix frame is contained within a space inside the first cuboid, double-helix frame.

6. The apparatus of claim 5, wherein the first cuboid, double-helix frame of the first helical structure comprises:

a first set of vias of the first helical structure formed through the first substrate at a first side of the cuboid, double-helix frame;

a second set of vias of the first helical structure are formed through the first substrate at a second side of the cuboid, double-helix frame opposite to the first side;

first metal wires at a third side of the cuboid, double-helix frame, wherein the first metal wires connect to first ends of the first set of vias and to first ends of the second set of vias;

second metal wires at a fourth side of the cuboid, double-helix frame opposite to the third side, wherein the second metal wires connect to second ends of the first set of vias and to second ends of the second set of vias.

7. The apparatus of claim 6, wherein the first set of vias is parallel to the second set of vias, wherein the first metal wires are parallel to the second metal wires, and wherein the first set of vias and the second set of vias are perpendicular to the first metal wires and the second metal wires.

8. The apparatus of claim 6, wherein the first set of vias and the second set of vias are in the first substrate, wherein the first metal wires are inside a second substrate, wherein the third metal wires are inside a third substrate, wherein first micro-bumps at the first side of the first helical structure connect the first metal wires to the first ends of the first set of vias, wherein second micro-bumps at the second side of the first helical structure connect the first metal wires to the first ends of the second set of vias, wherein third micro-bumps at the first side of the first helical structure connect the second metal wires to the second ends of the first set of vias, and wherein fourth micro-bumps at the second side of the first helical structure connect the second metal wires to the second ends of the second set of vias.

9. The apparatus of claim 6, wherein the second cuboid, double-helix frame of the second helical structure comprises:

a third set of vias formed through the first substrate at a first side of the second cuboid, double-helix frame parallel to the first side of the first cuboid, double-helix frame;

a fourth set of vias formed through the first substrate at a second side of the second cuboid, double-helix frame parallel to the second side of the first cuboid, double-helix frame;

third metal wires at a third side of the second cuboid, double-helix frame, wherein the third metal wires connect to first ends of the third set of vias and to first ends of the fourth set of vias; and

fourth metal wires at a fourth side of the second cuboid, double-helix frame, wherein the fourth metal wires connect to second ends of the third set of vias and to second ends of the fourth set of vias, wherein the third vias are parallel to the fourth vias, and wherein the third metal wires are parallel to the fourth metal wires.

10. The apparatus of claim 1, wherein one or more of a second portion of the first helical structure and a second portion of the second helical structure are contained within one or more additional substrates different from the first substrate.

11. A method of forming a nested helical inductor, said method comprising:

forming a first section of an electromagnetic inductor coil, wherein the first section of the electromagnetic coil has first windings that wind in a first direction, wherein at least a portion of the first windings extend vertically through a first semi-conductive substrate, and wherein the first section of the electromagnetic coil has a double-helical shape; and

forming a second section of the electromagnetic inductor coil inside a space within the double-helical shape of the first section of the electromagnetic coil, wherein the second section of the electromagnetic coil has second windings that wind in a second direction opposite to the first direction, and wherein at least a portion of the second windings extend vertically through at least a portion of the first semi-conductive substrate.

12. The method of claim 11, wherein the forming the first section of the electromagnetic inductor coil comprises:

forming vias for the first section of the electromagnetic coil with, wherein the vias comprise the at least the portion of the first windings that extend vertically through the first semi-conductive substrate;

forming first metal wires for the first section of the electromagnetic coil, wherein the first metal wires are connected to first ends of the vias; and

forming second metal wires for the first section of the electromagnetic coil wherein the second metal wires are connected to second ends of the first set of vias.

13. The method of claim 12, wherein the vias are through-silicon vias.

14. The method of claim 12, wherein the forming the first metal wires comprises:

forming a first metal layer proximal to a first surface of the first semi-conductive substrate; and

forming the first metal wires from the first metal layer, wherein the forming the vias comprises forming the vias perpendicular to the first metal wires.

15. The method of claim 14, wherein the forming the second metal wires comprises:

forming a second metal layer proximal to a second surface of the first semi-conductive substrate opposite to the first surface; and

forming the second metal wires from the second metal layer, wherein the forming the vias comprises forming the vias perpendicular to the second metal wires, wherein the vias traverse a vertical distance from the first metal wires through the first semi-conductive substrate to the second metal wires.

16. The method of claim 12, wherein the forming the first metal wires comprises forming the first metal wires in a second semi-conductive substrate proximal to a surface of the second semi-conductive substrate, wherein the second semi-conductive substrate is stacked vertically with the first semi-conductive substrate, wherein a surface of the first semi-conductive substrate is perpendicular to, and facing, the surface of the second semi-conductive substrate, and further comprising:

forming micro-bumps, wherein the micro-bumps connect the first metal wires to the first ends of the vias, wherein the first ends of the vias are at the surface of the first semi-conductive substrate.

17. An apparatus comprising:

a first semi-conductive substrate of a stacked semi-conductive structure;

a second semi-conductive substrate of the stacked semi-conductive structure;

a first helical structure of an electromagnetic inductor coil, wherein the first helical structure has first windings that wind in a first direction, wherein a first portion of the first windings are inside the first semi-conductive substrate, wherein a second portion of the first windings extend vertically through the second semi-conductive substrate, and wherein the first helical structure has a cuboid, double-helical shape; and

a second helical structure of the electromagnetic inductor coil, wherein the second helical structure is formed inside a space within the cuboid, double-helical shape of the first helical structure, wherein the second helical structure has second windings that wind in a second direction opposite to the first direction, and wherein at least a portion of the second windings extend vertically through at least a portion of the second semi-conductive substrate.

18. The apparatus of claim 17, wherein the first windings of the first helical structure have a shape as if wound around a first orthogonal polyhedron, wherein the second windings of the second helical structure have a shape as if wound around a second orthogonal polyhedron smaller than the first orthogonal polyhedron, and wherein the first windings and the second windings are concentric.

19. The apparatus of claim 17, wherein the at least the portion of the first windings that extend vertically through the first semi-conductive substrate comprise through-silicon vias, wherein first metal wires of the first helical structure are perpendicular to the through-silicon vias and connect to first ends of the through-silicon vias;

and wherein second metal wires of the first helical structure are perpendicular to the through-silicon vias and connect to second ends of the through-silicon vias.

20. The apparatus of claim 19 further comprising:

micro-bumps, wherein the first metal wires are inside the first semi-conductive substrate, wherein the first metal wires are coplanar with a surface of the first semi-conductive substrate, wherein a surface of the second semi-conductive substrate is perpendicular to, and facing, the surface of the first semi-conductive substrate, wherein the first ends of the vias are at the surface of the second semi-conductive substrate, and wherein the micro-bumps connect the first metal wires in the first semi-conductive substrate to the first ends of the vias in the second semi-conductive substrate.