HIGHLY SELECTIVE DOPED OXIDE REMOVAL METHOD
First Claim
1. A method of etching a patterned substrate, the method comprising:
- transferring the patterned substrate into a substrate processing region of a substrate processing chamber, wherein the patterned substrate has exposed doped silicon oxide;
flowing a fluorine-containing precursor into a remote plasma region fluidly coupled to the substrate processing region while forming a remote plasma in the remote plasma region to produce plasma effluents;
flowing water vapor into the substrate processing region without first passing the water vapor through any remote plasma; and
etching the exposed doped silicon oxide, wherein the exposed doped silicon oxide is one of boron-doped silicate glass, phosphorus-doped silicate glass or boron-and-phosphorus-doped silicate glass.
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Abstract
A method of etching doped silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using partial remote plasma excitation. The remote plasma excites a fluorine-containing precursor and the plasma effluents created are flowed into a substrate processing region. A hydrogen-containing precursor, e.g. water, is concurrently flowed into the substrate processing region without plasma excitation. The plasma effluents are combined with the unexcited hydrogen-containing precursor in the substrate processing region where the combination reacts with the doped silicon oxide. The plasmas effluents react with the patterned heterogeneous structures to selectively remove doped silicon oxide.
218 Citations
16 Claims
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1. A method of etching a patterned substrate, the method comprising:
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transferring the patterned substrate into a substrate processing region of a substrate processing chamber, wherein the patterned substrate has exposed doped silicon oxide; flowing a fluorine-containing precursor into a remote plasma region fluidly coupled to the substrate processing region while forming a remote plasma in the remote plasma region to produce plasma effluents; flowing water vapor into the substrate processing region without first passing the water vapor through any remote plasma; and etching the exposed doped silicon oxide, wherein the exposed doped silicon oxide is one of boron-doped silicate glass, phosphorus-doped silicate glass or boron-and-phosphorus-doped silicate glass. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of etching a patterned substrate, the method comprising:
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transferring the patterned substrate into a substrate processing region of a substrate processing chamber, wherein the patterned substrate has an exposed portion of doped silicon oxide, wherein the doped silicon oxide consists essentially of silicon, oxygen and one or both of boron and phosphorus; flowing a fluorine-containing precursor and an oxygen-containing precursor into a remote plasma region fluidly coupled to the substrate processing region while forming a remote plasma in the remote plasma region to produce plasma effluents; flowing a hydrogen-containing precursor into the substrate processing region without first passing the hydrogen-containing precursor through the remote plasma region; combining the hydrogen-containing precursor and the plasma effluents in the substrate processing region, and etching the exposed portion of doped silicon oxide. - View Dependent Claims (12, 13, 14, 15)
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11. (canceled)
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16. A method of etching a patterned substrate, the method comprising:
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transferring the patterned substrate into a substrate processing region of a substrate processing chamber, wherein the patterned substrate has exposed doped silicon oxide wherein the exposed doped silicon oxide further comprises boron, phosphorus or boron and phosphorus; flowing nitrogen trifluoride into a remote plasma region fluidly coupled to the substrate processing region while forming a remote plasma in the remote plasma region to produce plasma effluents; flowing water vapor into the substrate processing region without first passing the water vapor through the remote plasma region; etching the exposed doped silicon oxide, wherein a temperature of the patterned substrate is between about 40°
C. and about 80°
C. during the operation of etching the exposed doped silicon oxide; andremoving the patterned substrate from the substrate processing region.
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Specification