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Method of Reducing an Impurity Concentration in a Semiconductor Body, Method of Manufacturing a Semiconductor Device and Semiconductor Device

  • US 20150371871A1
  • Filed: 06/19/2014
  • Published: 12/24/2015
  • Est. Priority Date: 06/19/2014
  • Status: Active Grant
First Claim
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1. A method of reducing an impurity concentration in a semiconductor body, the method comprising:

  • irradiating the semiconductor body with particles through a first side of the semiconductor body; and

    removing at least a part of impurities from an irradiated part of the semiconductor body by out-diffusion during thermal treatment in a temperature range between 450°

    C. to 1200°

    C.

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