THROUGH ARRAY ROUTING FOR NON-VOLATILE MEMORY
First Claim
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1. A non-volatile memory, comprising:
- a memory array comprising a stack of alternating dielectric and conductive layers formed on an insulating layer, the memory array further comprising an array region and a peripheral region;
a structure formed under at least one of the array region and peripheral region and electrically coupled to another component of said non-volatile memory; and
a through array via formed in at least one of said array region and said peripheral region;
wherein at least one access line of said memory array is routed through said through array via.
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Abstract
Technologies for routing access lines in non-volatile memory are described. In some embodiments the technologies include forming one or more through array vias in a portion of a memory array in a non-volatile memory, such as in an array region or peripheral region, one or more access lines may be routed through the through array via, instead of within a region above or below an array or peripheral region of the memory array. This can enable alternative routing configurations, and may enable additional access lines to be routed without increasing or substantially increasing the block height of the non-volatile memory. Non-volatile memory employing such technologies is also described.
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Citations
25 Claims
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1. A non-volatile memory, comprising:
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a memory array comprising a stack of alternating dielectric and conductive layers formed on an insulating layer, the memory array further comprising an array region and a peripheral region; a structure formed under at least one of the array region and peripheral region and electrically coupled to another component of said non-volatile memory; and a through array via formed in at least one of said array region and said peripheral region; wherein at least one access line of said memory array is routed through said through array via. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of forming a non-volatile memory, comprising:
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providing a memory array comprising a stack of alternating dielectric and conductive layers formed on an insulating layer, the memory array further comprising an array region and a peripheral region; forming at least one through array via in at least one of said array region and peripheral region, the through array via extending from an upper surface of said stack of alternating dielectric and conductive layers to a structure under at least one of the array region and the peripheral region, the structure being electrically coupled to an another component of said non-volatile memory; wherein the through array via is configured to enable electrical coupling of at least one access line of said memory array to said structure. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 25)
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24. The non-volatile of claim 24 wherein said first conductive layer is titanium and the second conductive layer is tungsten.
Specification