IMAGE SENSOR AND IMAGE PROCESSING SYSTEM INCLUDING THE SAME

• US 20150372036A1
• Filed: 06/19/2015
• Published: 12/24/2015
• Est. Priority Date: 06/20/2014
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: SUH, Sung Dong, YUN, Sung Young, SUL, Sang Chul, JIN, Yong Wan, ISHII, Masaru
• Granted Patent: US 9,780,130 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/1462 Coatings
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14625 Optical elements or arrangements associated with the device
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/1463 Pixel isolation structures
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14665 Imagers using a photoconductor layer
• CPC Class Codes: H10K 39/32 Organic image sensors

Abstract

An image sensor is provided. The image sensor includes a first photoelectric conversion element and a second photoelectric conversion element, which are formed in a semiconductor substrate; a red color filter formed on the first photoelectric conversion element; a cyan color filter formed on the second photoelectric conversion element; and an organic photoelectric conversion layer formed on the red color filter and the cyan color filter, the organic photoelectric conversion layer configured to absorb wavelengths in a green range.

Claims

1. An image sensor comprising:

a first photoelectric conversion element and a second photoelectric conversion element, which are formed in a semiconductor substrate;

a red color filter formed on the first photoelectric conversion element;

a cyan color filter formed on the second photoelectric conversion element;

an organic photoelectric conversion layer formed on the red color filter and the cyan color filter, the organic photoelectric conversion layer configured to absorb wavelengths in a green range;

a first oxide film formed on the organic photoelectric conversion layer, the first oxide film configured to have a first refractive index; and

a second oxide film formed on the first oxide film, the second oxide film configured to have a second refractive index,

wherein the first refractive index is less than the second refractive index.

2. The image sensor of claim 1, wherein the first oxide film comprises Al₂O₃ and the second oxide film comprises SiON.

3. The image sensor of claim 1, wherein the first oxide film and the second oxide film form a pair of films and at least two pairs of films are stacked.

4. The image sensor of claim 1, further comprising a third oxide film formed on the second oxide film, the third oxide film configured to have the first refractive index.

5. The image sensor of claim 4, wherein the first oxide film and the third oxide film comprises SiO₂ and the second oxide film comprises SiON.

6. The image sensor of claim 1, further comprising:

a planarization layer formed on the organic photoelectric conversion layer; and

a plurality of oxide films formed between the organic photoelectric conversion layer and the planarization layer,

wherein the oxide films have different refractive indexes.

7. The image sensor of claim 1, further comprising:

a transparent electrode connected to the organic photoelectric conversion layer;

a storage node formed in the semiconductor substrate; and

a connection circuit configured to connect the transparent electrode with the storage node.

8. The image sensor of claim 7, wherein the connection circuit comprises:

a first metal connected to the transparent electrode;

a deep trench isolation (DTI) comprising a conductive plug therein;

a second metal; and

a plurality of third metals configured to connect the first metal, the conductive plug, the second metal, and the storage node in series to one another.

9. The image sensor of claim 8, further comprising a shallow trench isolation (STI) formed between the storage node and one from among the first photoelectric conversion element and the second photoelectric conversion element.

10. The image sensor of claim 1, further comprising:

a deep trench isolation (DTI) formed between the first photoelectric conversion element and the second photoelectric conversion element; and

a shallow trench isolation (STI) formed between the DTI and the second photoelectric conversion element.

11. The image sensor of claim 10, wherein the DTI comprises a conductive plug formed therein.

12. The image sensor of claim 11, wherein the conductive plug comprises polysilicon.

13. An image processing system comprising:

an image sensor configured to output image data; and

a processor configured to process the image data,

wherein the image sensor comprises;

a first photoelectric conversion element and a second photoelectric conversion element, which are formed in a semiconductor substrate;

a red color filter formed on the first photoelectric conversion element;

a cyan color filter formed on the second photoelectric conversion element;

an organic photoelectric conversion layer formed on the red color filter and the cyan color filter, the organic photoelectric conversion layer configured to absorb wavelengths in a green range;

green range;

a first oxide film formed on the organic photoelectric conversion layer, the first oxide film configured to have a first refractive index; and

a second oxide film formed on the first oxide film, the second oxide film configured to have a second refractive index,

wherein the first refractive index is less than the second refractive index.

14. The image processing system of claim 13, further comprising a camera serial interface configured to transmit the image data from the image sensor to the processor.

15. The image processing system of claim 13, wherein the image sensor further comprises a third oxide film formed on the second oxide film, the third oxide film configured to have the first refractive index.

16. The image processing system of claim 13, wherein the image sensor further comprises:

a deep trench isolation (DTI) formed between the first photoelectric conversion element and the second photoelectric conversion element, the DTI comprising a conductive plug formed therein; and

a shallow trench isolation (STI) formed between the DTI and the second photoelectric conversion element.

17. The image processing system of claim 13, wherein the image sensor further comprises:

a transparent electrode connected to the organic photoelectric conversion layer;

a first metal connected to the transparent electrode;

a deep trench isolation (DTI) comprising a conductive plug therein;

a second metal;

a storage node formed in the semiconductor substrate; and

a plurality of third metals configured to connect the first metal, the conductive plug, the second metal, and the storage node in series to one another.

18. The image processing system of claim 17, wherein at least one of the third metals comprises tungsten.

19. An image sensor comprising:

a first photoelectric conversion element configured to absorb wavelengths in a red range;

a second photoelectric conversion element configured to absorb wavelengths in a blue range;

a red color filter formed on the first photoelectric conversion element;

a cyan color filter formed on the second photoelectric conversion element; and

an organic photoelectric conversion layer formed on the red color filter and the cyan color filter, the organic photoelectric conversion layer configured to absorb wavelengths in a green range.

20. The image sensor of claim 19, further comprising:

a first oxide film formed on the organic photoelectric conversion layer, the first oxide film configured to have a first refractive index; and

a second oxide film formed on the first oxide film, the second oxide film configured to have a second refractive index.

21. (canceled)

22. (canceled)