MODULATED SUPER JUNCTION POWER MOSFET DEVICES
First Claim
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1. A super junction power metal oxide semiconductor field effect transistor (MOSFET) device having a channel of first type dopant, said device comprising:
- a first plurality of columns comprising second type dopant that is different from said first type dopant, said first plurality of columns formed in a region comprising said first type dopant, each column in said first plurality of columns having substantially a same first width; and
a second plurality of columns comprising said second type dopant, said second plurality of columns formed in said region comprising said first type dopant, each column in said second plurality of columns having substantially a same second width;
wherein said first width is different from said second width.
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Abstract
A semiconductor device—e.g., a super junction power MOSFET—includes a number of columns of one type of dopant formed in a region of another type of dopant. Generally speaking, the columns are modulated in some manner. For example, the widths (e.g., diameters) of some columns are greater than the widths of other columns.
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Citations
20 Claims
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1. A super junction power metal oxide semiconductor field effect transistor (MOSFET) device having a channel of first type dopant, said device comprising:
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a first plurality of columns comprising second type dopant that is different from said first type dopant, said first plurality of columns formed in a region comprising said first type dopant, each column in said first plurality of columns having substantially a same first width; and a second plurality of columns comprising said second type dopant, said second plurality of columns formed in said region comprising said first type dopant, each column in said second plurality of columns having substantially a same second width; wherein said first width is different from said second width. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a substrate comprising a first type dopant; a super junction structure coupled to said substrate and comprising a columnar first region and a columnar second region separated by a third region, said third region comprising said first type dopant and said columnar first region and said columnar second region comprising second type dopant that is different from said first type dopant, wherein said first region has a first width measured orthogonal to the longitudinal axis of said first region, and wherein said second region has a second width measured orthogonal to the longitudinal axis of said second region, said first width different from said second width. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A semiconductor device comprising a gate, source, and drain, said semiconductor device comprising:
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a substrate of said first type dopant; and an epitaxial layer coupled to said substrate, said epitaxial layer doped with said first type dopant, said epitaxial layer having formed therein; a first plurality of columns comprising second type dopant that is different from said first type dopant, each column in said first plurality of columns having substantially a same first width; and a second plurality of columns comprising said second type dopant, each column in said second plurality of columns having substantially a same second width; wherein said first width is different from said second width. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification