Semiconductor Switching Device with Different Local Threshold Voltage
First Claim
1. A semiconductor device, comprising:
- a semiconductor substrate comprising a plurality of switchable cells defining an active area of the semiconductor device, an outer rim, and an edge termination region arranged between the switchable cells and the outer rim, each of the switchable cells comprising a body region, a gate electrode structure and a source region;
a source metallization in ohmic contact with the source regions of the switchable cells; and
a gate metallization in ohmic contact with the gate electrode structures of the switchable cells;
wherein the active area defined by the switchable cells comprises at least a first switchable region having a first threshold and at least a second switchable region having a second threshold which is higher than the first threshold, andwherein an area assumed by the first switchable region is larger than an area assumed by the second switchable region.
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Abstract
A semiconductor device includes a semiconductor substrate having a plurality of switchable cells defining an active area of the semiconductor device, an outer rim, and an edge termination region arranged between the switchable cells and the outer rim. Each of the switchable cells includes a body region, a gate electrode structure and a source region. A source metallization is in ohmic contact with the source regions of the switchable cells. A a gate metallization is in ohmic contact with the gate electrode structures of the switchable cells. The active area defined by the switchable cells includes at least a first switchable region having a first threshold and at least a second switchable region having a second threshold which is higher than the first threshold. An area assumed by the first switchable region is larger than an area assumed by the second switchable region.
30 Citations
23 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate comprising a plurality of switchable cells defining an active area of the semiconductor device, an outer rim, and an edge termination region arranged between the switchable cells and the outer rim, each of the switchable cells comprising a body region, a gate electrode structure and a source region; a source metallization in ohmic contact with the source regions of the switchable cells; and a gate metallization in ohmic contact with the gate electrode structures of the switchable cells; wherein the active area defined by the switchable cells comprises at least a first switchable region having a first threshold and at least a second switchable region having a second threshold which is higher than the first threshold, and wherein an area assumed by the first switchable region is larger than an area assumed by the second switchable region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A semiconductor device, comprising:
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a semiconductor substrate comprising a plurality of switchable cells defining an active area of the semiconductor device, an outer rim, and an edge termination region arranged between switchable cells and the outer rim, each of the switchable cells comprising a body region, a gate electrode structure and a source region, the body region comprising a channel region next to the gate electrode structure; a source metallization in ohmic contact with the source regions of the switchable cells; and a gate metallization in ohmic contact with the gate electrode structures of the switchable cells; wherein the active area defined by the switchable cells comprises at least a first switchable region and a second switchable region different to the first switchable region, wherein portions of the channel regions of the switchable cells arranged in the first switchable region have a doping concentration which is lower than a doping concentration of portions of the channel regions of the switchable cells arranged in the second switchable region. - View Dependent Claims (17, 18, 19)
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20. A method for manufacturing a semiconductor device, comprising:
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providing a semiconductor substrate comprising an outer rim, an active area, and an edge termination region arranged between the active area and the outer rim; forming a plurality of switchable cells in the active area, wherein each of the switchable cells comprises a body region, a gate electrode structure, and a source region, wherein the active area defined by the switchable cells comprises at least a first switchable region having a first threshold and at least a second switchable region having a second threshold which is higher than the first threshold, and wherein an area assumed by the first switchable region is larger than an area assumed by the second switchable region; forming a source metallization in ohmic contact with the source regions of the switchable cells; and forming a gate metallization in ohmic contact with the gate electrode structures of the switchable cells. - View Dependent Claims (21, 22, 23)
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Specification