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METHOD AND STRUCTURE FOR ENABLING HIGH ASPECT RATIO SACRIFICIAL GATES

  • US 20150372127A1
  • Filed: 10/27/2014
  • Published: 12/24/2015
  • Est. Priority Date: 06/18/2014
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising:

  • a plurality of functional gate structures located on a surface of a substrate;

    a dielectric spacer comprising a first dielectric material located on sidewalls of each functional gate structure of said plurality of functional gate structures; and

    a second dielectric material located on end portions of each functional gate structure, wherein said second dielectric material comprises a different dielectric material than said first dielectric material of said dielectric spacer and wherein said second dielectric material is located orthogonal to said dielectric spacer and each functional gate structure.

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