METHOD AND STRUCTURE FOR ENABLING HIGH ASPECT RATIO SACRIFICIAL GATES
First Claim
Patent Images
1. A semiconductor structure comprising:
- a plurality of functional gate structures located on a surface of a substrate;
a dielectric spacer comprising a first dielectric material located on sidewalls of each functional gate structure of said plurality of functional gate structures; and
a second dielectric material located on end portions of each functional gate structure, wherein said second dielectric material comprises a different dielectric material than said first dielectric material of said dielectric spacer and wherein said second dielectric material is located orthogonal to said dielectric spacer and each functional gate structure.
1 Assignment
0 Petitions
Accused Products
Abstract
Sacrificial gate structures having an aspect ratio of greater than 5:1 are formed on a substrate. In some embodiments, each sacrificial gate structure straddles a portion of a semiconductor fin that is present on the substrate. An anchoring element is formed orthogonal to each sacrificial gate structure rendering the sacrificial gate structures mechanically stable. After formation of a planarization dielectric layer, each anchoring element can be removed and thereafter each sacrificial gate structure can be replaced with a functional gate structure.
51 Citations
15 Claims
-
1. A semiconductor structure comprising:
-
a plurality of functional gate structures located on a surface of a substrate; a dielectric spacer comprising a first dielectric material located on sidewalls of each functional gate structure of said plurality of functional gate structures; and a second dielectric material located on end portions of each functional gate structure, wherein said second dielectric material comprises a different dielectric material than said first dielectric material of said dielectric spacer and wherein said second dielectric material is located orthogonal to said dielectric spacer and each functional gate structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
-
Specification