CHEMICAL MECHANICAL POLISHING LAYER FORMULATION WITH CONDITIONING TOLERANCE

• US 20150375362A1
• Filed: 06/25/2014
• Published: 12/31/2015
• Est. Priority Date: 06/25/2014
• Status: Active Grant

• Current Assignee: Dow Global Technologies LLC (Dow, Inc.), Rohm and Haas Electronic Materials CMP Holdings, Inc.
• Original Assignee: Dow Global Technologies LLC (Dow, Inc.), Rohm and Haas Electronic Materials CMP Holdings, Inc.
• Inventors: Qian, Bainian, DeGroot, Marty W., Sonnenschein, Mark F.
• Granted Patent: US 9,259,821 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: B24B 37/205 provided with a window for inspecting the surface of the work being lapped
• CPC Class Codes: B24B 37/24 characterised by the composition or properties of the pad materials
• CPC Class Codes: G02B 1/12 by surface treatment, e.g. by irradiation
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step

Abstract

A chemical mechanical polishing pad is provided containing: a polyurethane polishing layer having a composition and a polishing surface; wherein the polyurethane polishing layer composition exhibits an acid number of ≧0.5 mg (KOH)/g; wherein the polishing surface is adapted for polishing a substrate; and, wherein the polishing surface exhibits a conditioning tolerance of ≧80%.

Claims

1. A chemical mechanical polishing pad, comprising:

a polyurethane polishing layer having a composition and a polishing surface;

wherein the polyurethane polishing layer composition exhibits an acid number of ≧

0.5 mg (KOH)/g;

wherein the polishing surface is adapted for polishing a substrate; and

, wherein the polishing surface exhibits a conditioning tolerance of ≧

80%.

2. The chemical mechanical polishing pad of claim 1, wherein the substrate is selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate.

3. The chemical mechanical polishing pad of claim 1, wherein the polyurethane polishing layer exhibits a specific gravity of greater than 0.6;

a Shore D hardness of 5 to 80;

an elongation to break of 100 to 450%.

4. The chemical mechanical polishing pad of claim 1, wherein the polyurethane polishing layer composition is the reaction product of ingredients, comprising:

(a) a polyfunctional isocyanate;

(b) a curative system, comprising;

(i) a carboxylic acid containing polyfunctional curative having an average of at least two active hydrogens and at least one carboxylic acid functional group per molecule; and

,

(c) optionally, a plurality of microelements.

5. The chemical mechanical polishing pad of claim 4, wherein the curative system further comprises at least one of:

a diamine;

a diol;

an amine initiated polyol curative; and

,

a high molecular weight polyol curative having a number average molecular weight, M_N, of 2,000 to 100,000 and an average of 3 to 10 hydroxyl groups per molecule.

6. The chemical mechanical polishing pad of claim 1, wherein the polyurethane polishing layer composition is the reaction product of ingredients, comprising:

(a) an isocyanate terminated urethane prepolymer, wherein the isocyanate terminated urethane prepolymer is the reaction product of ingredients, comprising;

(i) a polyfunctional isocyanate; and

,

(ii) a carboxylic acid containing polyfunctional material having an average of at least two active hydrogens and at least one carboxylic acid functional group per molecule; and

,

(iii) a prepolymer polyol; and

,

(b) a curative system, comprising at least one polyfunctional curative; and

,

(c) optionally, a plurality of microelements.

7. The chemical mechanical polishing pad of claim 1, further comprising:

an endpoint detection window.

8. The chemical mechanical polishing pad of claim 7, wherein the endpoint detection window is selected from the group consisting of an integral window and a plug in place window.

9. A method of chemical mechanical polishing a substrate, comprising:

providing a substrate;

selecting a chemical mechanical polishing pad comprising a polyurethane polishing layer having a composition and a polishing surface;

wherein the polishing surface is adapted for polishing the substrate;

wherein the composition is selected to exhibit an acid number of ≧

0.5 mg (KOH)/g; and

, wherein the polishing surface exhibits a conditioning tolerance of ≧

80%;

creating dynamic contact between the polishing surface and the substrate to polish a surface of the substrate; and

,

conditioning of the polishing surface with an abrasive conditioner.

10. The method of claim 9, wherein the substrate is selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate.