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Si-CONTAINING FILM FORMING PRECURSORS AND METHODS OF USING THE SAME

  • US 20150376211A1
  • Filed: 06/12/2015
  • Published: 12/31/2015
  • Est. Priority Date: 03/30/2015
  • Status: Active Grant
First Claim
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1. A Si-containing film forming composition comprising a mono-substituted TSA precursor having the formula:


  • (SiH3)2N—

    SiH2

    Xwherein X is selected from a halogen atom selected from Cl, Br or I;

    an isocyanato group [—

    NCO];

    an amino group [—

    NR1R2];

    an N-containing C4-C10 saturated or unsaturated heterocycle;

    or an alkoxy group [—

    O—

    R];

    R1, R2 and R each is selected from H;

    a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group;

    or a silyl group [SiR′

    3] with each R′

    being independently selected from H;

    a halogen atom selected from Cl, Br, I;

    a C1-C4 saturated or unsaturated hydrocarbyl group;

    a C1-C4 saturated or unsaturated alkoxy group;

    or an amino group [—

    NR3R4] with each R3 and R4 being selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group;

    provided that if R1

    H, then R2

    H or Me.

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