GAS CLUSTER REACTOR FOR ANISOTROPIC FILM GROWTH

• US 20150376791A1
• Filed: 08/21/2015
• Published: 12/31/2015
• Est. Priority Date: 05/15/2014
• Status: Abandoned Application

• Current Assignee: Elpis Technologies Inc. (Wi-LAN Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: Gluschenkov, Oleg, Ozcan, Ahmet S.
• Application Number:
  US14/831,900
• Publication Number:
  US 20150376791A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C23C 14/02 Pretreatment of the material to be coated C23C14/04 takes precedence
• CPC Class Codes: C23C 16/0236 by etching with a reactive gas
• CPC Class Codes: C23C 16/42 Silicides
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/45523 Pulsed gas flow or change of composition over time
• CPC Class Codes: C23C 16/4582 Rigid and flat substrates, e.g. plates or discs C23C16/4581 takes precedence
• CPC Class Codes: C23C 16/486 using ion beam radiation
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01J 2237/0812 Ionized cluster beam [ICB] sources
• CPC Class Codes: H01J 2237/30472 Controlling the beam
• CPC Class Codes: H01J 2237/31732 Depositing thin layers on selected microareas ion plating H01J2237/3142
• CPC Class Codes: H01J 2237/3174 Etching microareas
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/30 Electron-beam or ion-beam tubes for localised treatment of objects
• CPC Class Codes: H01J 37/3002 Details
• CPC Class Codes: H01J 37/305 for casting, melting, evaporating or etching methods for casting or melting of metals with electron beam or gas discharges C22B9/22
• CPC Class Codes: H01J 37/3053 for evaporating or etching
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01L 21/02057 Cleaning during device manufacture
• CPC Class Codes: H01L 21/02068 during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
• CPC Class Codes: H01L 21/28506 : of conductive layers
• CPC Class Codes: H01L 21/28518 : the conductive layers comprising silicides H01L21/28537 takes precedence
• CPC Class Codes: H01L 21/2855 : by physical means, e.g. sputtering, evaporation H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/28575 : on semiconductor bodies comprising AIIIBV compounds
• CPC Class Codes: H01L 21/3065 : Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/3205 : Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers manufacture of electrodes H01L21/28
• CPC Class Codes: H01L 21/67028 : for cleaning followed by drying, rinsing, stripping, blasting or the like

Abstract

A method of forming a low temperature silicide film on a substrate includes supplying a source gas to a cluster formation chamber to form a gas cluster that is subsequently moved to an ionization-acceleration chamber to form a gas cluster ion beam (GCIB). The GCIB is injected into a processing chamber containing the substrate. A precursor gas is injected through an injection device located on a top portion of the processing chamber to form a silicide film on the substrate by bombarding the substrate with the GCIB in the presence of the precursor gas.

Claims

1. A gas cluster ion beam (GCIB) device, the device comprising:

a source gas cluster formation chamber;

an ionization-acceleration chamber connected to the cluster formation chamber;

a processing chamber connected to the ionization-acceleration chamber;

a precursor gas injection device positioned on a top portion of the processing chamber such that the precursor gas is directed at a surface of a substrate contained within the processing chamber; and

an opening between the ionization-acceleration chamber and the processing chamber.

2. The GCIB device of claim 1, wherein the injection device comprises a device having a plurality of openings through which the precursor gas may flow.

3. The GCIB device of claim 1, further comprising:

a mechanical scanning system in the processing chamber.

4. The GCIB device of claim 1, further comprising:

an aperture in the opening, the aperture having a width capable of forming a collimated GCIB.

5. The GCIB device of claim 4, wherein the opening has a width capable of forming a broad GCIB.