NITRIDE SEMICONDUCTOR LAYER, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER
First Claim
1. A nitride semiconductor layer spreading along a first surface, the nitride semiconductor layer comprising:
- a first region, a length of the first region in a first direction parallel to the first surface being longer than a length of the first region in a second direction parallel to the first surface and perpendicular to the first direction; and
a second region arranged with the first region in the second direction, a length of the second region in the first direction being longer than a length of the second region in the second direction,a c-axis being tilted with respect to the second direction for the first region and the second region,the c-axis intersecting a third direction perpendicular to the first surface.
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Abstract
According to one embodiment, a nitride semiconductor layer spreading along a first surface is provided. The nitride semiconductor layer includes a first region and a second region. A length of the first region in a first direction parallel to the first surface is longer than a length of the first region in a second direction parallel to the first surface and perpendicular to the first direction. The second region is arranged with the first region in the second direction. A length of the second region in the first direction is longer than a length of the second region in the second direction. A c-axis being is tilted with respect to the second direction for the first region and the second region. The c-axis intersects a third direction perpendicular to the first surface.
12 Citations
20 Claims
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1. A nitride semiconductor layer spreading along a first surface, the nitride semiconductor layer comprising:
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a first region, a length of the first region in a first direction parallel to the first surface being longer than a length of the first region in a second direction parallel to the first surface and perpendicular to the first direction; and a second region arranged with the first region in the second direction, a length of the second region in the first direction being longer than a length of the second region in the second direction, a c-axis being tilted with respect to the second direction for the first region and the second region, the c-axis intersecting a third direction perpendicular to the first surface. - View Dependent Claims (2, 3, 4, 5)
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6. A nitride semiconductor device, comprising:
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a substrate including a major surface having an upper surface and a plurality of oblique surfaces, the oblique surfaces being tilted with respect to the upper surface, each length of the oblique surfaces in a first direction parallel to the upper surface being longer than each length of the oblique surfaces in a second direction parallel to the upper surface and perpendicular to the first direction, the oblique surfaces being arranged in the second direction; and a nitride semiconductor layer grown from the oblique surfaces, a c-axis of the nitride semiconductor layer being tilted with respect to the second direction, the c-axis intersecting a third direction perpendicular to the upper surface. - View Dependent Claims (7, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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8. A nitride semiconductor device, comprising:
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a nitride semiconductor layer, a substrate including a major surface having an upper surface and a plurality of oblique surfaces, the oblique surfaces being tilted with respect to the upper surface, each length of the oblique surfaces in a first direction parallel to the upper surface being longer than each length of the oblique surfaces in a second direction parallel to the upper surface and perpendicular to the first direction, the oblique surfaces being arranged in the second direction, the nitride semiconductor layer being grown from the oblique surfaces of the substrate, a c-axis of the nitride semiconductor layer being tilted with respect to the second direction, the c-axis intersecting a third direction perpendicular to the upper surface.
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20. A method for manufacturing a nitride semiconductor layer, comprising:
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preparing a substrate including a major surface having an upper surface and a plurality of oblique surfaces, the oblique surfaces being tilted with respect to the upper surface, each length of the oblique surfaces in a first direction parallel to the upper surface being longer than each length of the oblique surfaces in a second direction parallel to the upper surface and perpendicular to the first direction, the oblique surfaces being arranged in the second direction; and growing the nitride semiconductor layer from the oblique surfaces, a c-axis of the nitride semiconductor layer being tilted with respect to the second direction, the c-axis intersecting a third direction perpendicular to the upper surface.
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Specification